I use a ceramic capacitor with "C0G / NP0" dielectric, for C1 of the M2's RC terminator network (across the Edcor secondary), and I recommend it in the Bill Of Materials for the M2x clone of the M2. See the red box on the attachment below.
It is Mouser part number 81-RDE5C2A681J0K1H3B price is USD 0.41 qty=1.
C0G/NP0 is a Class 1 Ceramic, you can read more in the Wikipedia article about ceramic capacitors
_
It is Mouser part number 81-RDE5C2A681J0K1H3B price is USD 0.41 qty=1.
C0G/NP0 is a Class 1 Ceramic, you can read more in the Wikipedia article about ceramic capacitors
_
Attachments
Last edited:
use biggest SMD you can find, solder some tiny wires as legs
these are good enough , whatever they're called
these are good enough , whatever they're called
speaker impedance
i have a choice between a 12" 8ohm and a 16ohm Medium/bass driver , what will be the best for the M2 ? 🙂
i have a choice between a 12" 8ohm and a 16ohm Medium/bass driver , what will be the best for the M2 ? 🙂
i'm not worried at all ZM as i have your mighty name printed on the boards 😀
it's just that i have the choice between a 8R and a 16R version of the same driver. some says that with low damped amp like tube amplifer 16ohm will sounds better?
it's just that i have the choice between a 8R and a 16R version of the same driver. some says that with low damped amp like tube amplifer 16ohm will sounds better?
Last edited:
Why not use a film cap? There are many available from Digikey, Mouser etc. Polypropylene, Polystyrene etc.
Cheers
juanitox - What we are trying to say, in a round fashion, is that you need to make decisions about your speakers in regards to the entirety of the speaker system.
The M2 will gladly and authoritatively drive whatever you choose.
The M2 will gladly and authoritatively drive whatever you choose.
could the M2 use the same bias system as the F4 with a TL431 (or low current version of 431) ?
this could allow to remove the source resistors and increase the square law
this could allow to remove the source resistors and increase the square law
good luck with fixed bias at gates of IRFP without source resistors
F4 is having them, for reason(s)
see Babelfish M25 and necessary added complexity, to achieve exactly the same - square law
there are some other ideas for biasing, but it'll take some time
F4 is having them, for reason(s)
see Babelfish M25 and necessary added complexity, to achieve exactly the same - square law
there are some other ideas for biasing, but it'll take some time
see Babelfish M25 and necessary added complexity
do you refer to hall effect measuring boards to measure drain current without inserting any resistor?
do you refer to hall effect measuring boards to measure drain current without inserting any resistor?
yup
difference between F4 and M2 is current per mosfet
in F4 it's smaller, so action of source resistor is big enough to keep mosfet out of thermal runaway, on condition that heatsinking is up to task ( but that's general condition for all amps)
in M2, current per mosfet is greater enough, so you'll need impractically higher value for source resistor to achieve the same, so Papa introduced old t=rick of his ( in newer and more innovative way) to have active biasing mechanismus
beauty of this is that M2 is having almost exactly the same Iq, be it cold or hot
difference between F4 and M2 is current per mosfet
in F4 it's smaller, so action of source resistor is big enough to keep mosfet out of thermal runaway, on condition that heatsinking is up to task ( but that's general condition for all amps)
in M2, current per mosfet is greater enough, so you'll need impractically higher value for source resistor to achieve the same, so Papa introduced old t=rick of his ( in newer and more innovative way) to have active biasing mechanismus
beauty of this is that M2 is having almost exactly the same Iq, be it cold or hot
optodiode protection
and symmetry-sation of D1-D3 string, which is clamp-protection of OS modulation node, to keep mosfet gates of overvoltage
and symmetry-sation of D1-D3 string, which is clamp-protection of OS modulation node, to keep mosfet gates of overvoltage