In December, I will order. By the way IMD with 2 pairs
I would look at John Atkinson's face as he measures your amplifier.
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No, not Igor. Akulinichev Ivan Timofeevich.Transistor VT4 germanium RF.
A similar displacement scheme was used in a number of designs by Dr. Igor Akulinichev. He called the current shunt circuit
Ivan or Igor - let them be; in the meantime I'm working on the aluminum chassis for Widerhold Quasi Hexfet
Machining the Alu plate (1 inch thick, 6 wide x 12 long).
Copper spreaders for fet pairs + heatsink..
Should be enough for honest 2 x 120W.
Machining the Alu plate (1 inch thick, 6 wide x 12 long).
Copper spreaders for fet pairs + heatsink..
Should be enough for honest 2 x 120W.
Attachments
Great work. Are vertically mounted transistors running without a heatsink?
All TO-126 transistors are lined up on the PCB on the purpose - there will be Alu heatsink going across both boards, and all these plastic transistors will be screwed to it - including temperature sensor BD139s.
MJEs and BDs will need mica isolators...
The introduction of the EP into the voltage amplifier gives a positive result. Even in the composite with Oramn.
Added a local OOS to the emitter of the second transistor.A completely different amplifier has become. Of distortion decreased
Tried to sim it in ltspice, so for no success..Heavy oscillations...
I'm basically fine with versions sim-ed and built so far.
Don't think there would be big difference in measurements/listening -
all these amps already have very impressive parameters.
If there is one thing I would like to improve - it's the slew rate.
So far - 15V/us measured - which matches the sim exactly.
But this I guess is limited by VAS configuration itself, not the input stage..
Just to compare I sim-ed square waves on discrete NMOS200 (blameless quasi hexfet that I built few years ago)
Power amp under development
which shows slew rate over 60V/us.....
15V/us is perfectly fine for an amp, but not impressive , perhaps more is possible?
Don't think there would be big difference in measurements/listening -
all these amps already have very impressive parameters.
If there is one thing I would like to improve - it's the slew rate.
So far - 15V/us measured - which matches the sim exactly.
But this I guess is limited by VAS configuration itself, not the input stage..
Just to compare I sim-ed square waves on discrete NMOS200 (blameless quasi hexfet that I built few years ago)
Power amp under development
which shows slew rate over 60V/us.....
15V/us is perfectly fine for an amp, but not impressive , perhaps more is possible?
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