On Semi ThermalTrak

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JPV said:


I think that the real interesting region for the diodes is from 500 micro amps to 10 mA because that is where it will be used and where I am using them.

JPV

JPV,

I'll see what I can do to get the resolution better at 500 uA. It may happen automatically since I have two fewer 3xxx devices... If all else fails, I will collect static data points for VF vs IF at 100 uA and 500 uA.

John
 
Here's the Vbe tempco data for the 4281/4302:

NPN NJL4281 (Average of 5 units)
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.469V
27ºC 1mA 0.548V
27ºC 10mA 0.635V
27ºC 100mA 0.730V

100ºC 100uA 0.279V -2.60mV/ºC
100ºC 1mA 0.380V -2.30mV/ºC
100ºC 10mA 0.489V -2.00mV/ºC
100ºC 100mA 0.603V -1.74mV/ºC

PNP NJL4302 (Average of 5 units):
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.443V
27ºC 1mA 0.526V
27ºC 10mA 0.625V
27ºC 100mA 0.728V

100ºC 100uA 0.259V -2.52mV/ºC
100ºC 1mA 0.359V -2.29mV/ºC
100ºC 10mA 0.473V -2.08mV/ºC
100ºC 100mA 0.600V -1.75mV/ºC

So, with a standing bias of 100mA and an Hfe of between 80 and 250 (characteristic curves I've measured confirm this variation between units), we're looking at a base current of between 1.3mA and 400 uA, so idle tempco is roughly -2.15 to -2.50 mV/ºC for Vbe vs about 1.8 mV/ºC for diode Vf at 10 mA.

The biasing circuit I'll using has a pot in series with the diode string to set bias current, and a pot in parallel with a diode or two to set tempco... And a day spent chasing bias hot/cold/hot/cold until I get tempco and bias adjusted right.

Cheers,
John
 
jgedde said:
Here's the Vbe tempco data for the 4281/4302:

NPN NJL4281 (Average of 5 units)
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.469V
27ºC 1mA 0.548V
27ºC 10mA 0.635V
27ºC 100mA 0.730V

100ºC 100uA 0.279V -2.60mV/ºC
100ºC 1mA 0.380V -2.30mV/ºC
100ºC 10mA 0.489V -2.00mV/ºC
100ºC 100mA 0.603V -1.74mV/ºC

PNP NJL4302 (Average of 5 units):
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.443V
27ºC 1mA 0.526V
27ºC 10mA 0.625V
27ºC 100mA 0.728V

100ºC 100uA 0.259V -2.52mV/ºC
100ºC 1mA 0.359V -2.29mV/ºC
100ºC 10mA 0.473V -2.08mV/ºC
100ºC 100mA 0.600V -1.75mV/ºC

So, with a standing bias of 100mA and an Hfe of between 80 and 250 (characteristic curves I've measured confirm this variation between units), we're looking at a base current of between 1.3mA and 400 uA, so idle tempco is roughly -2.15 to -2.50 mV/ºC for Vbe vs about 1.8 mV/ºC for diode Vf at 10 mA.

The biasing circuit I'll using has a pot in series with the diode string to set bias current, and a pot in parallel with a diode or two to set tempco... And a day spent chasing bias hot/cold/hot/cold until I get tempco and bias adjusted right.

Cheers,
John

Great!

Good point is that the temco of the Vbe of NPN and PNP are the same.

The temco of the Vbe rises ( in absolute value) by 0.2 to 0.3 mV/°C per decade of current increase which is correct.

The puzzeling point is that the temco of the Vbe of the diodes is between 1.7 and 1.8 mV/°C wathever the current. This shows a large departure from ideal.

Perhaps under 1mA will it be better but as such we cannot use the tuning of current to adjust temco of diodes. It is puzzeling

Taking carrefully the data from the Onsemi spec ( with a caliper) I have :
@1mA temco = -2.47mV/°C
@10mA -2.13
@100mA -1.95

This shows a normal change with current. I used the 100°C and the 25°C curves as I did with your data.

For the 3XXX, if you have a time problem, the interesting measurements would be some single points:

For 0.7mA Vbe at 25°C and 100°C
same for 0.8ma 1ma and 5mA

So four measurements at 25°C and 4 at 100 °C


Thanks

JPV
 
DouglasSelf said:


Hi Bob

Sorry it's taken so long to get back to you on this one.

If I understand you correctly, measuring Vq (emitter-to-emitter voltage ) versus time is going to require a differential amplifier which is accurate to less than 1 mV, connected to some sort of recorder. A bit of specialised kit to build, whereas the AP was sitting right there.
The problem I see with this is that it is not possible to measure what's happening when the amplifier is working; only before and after a burst of power.

I certainly don't think that the under-biased-THD-vs-time method is perfect. For one thing, it relies on having the bias set too low, so the multiplication factor of the Vbe-multiplier (or equivalent) will be slightly less than for optimal bias and this might throw things off, depending on the details of the circuitry.

I have been wondering if the same measurement could be done with optimal biasing. Take a Blameless amplifier, and the distortion products at 10 kHz will be entirely due to the crossover, even if optimal. You could measure 10 kHz THD vs time, and this might give meaningful results. The problem would be that any deviation from optimal bias will increase the THD, so it will be hard to distinguish over-biasing from under-biasing, unless you sit and watch the residual and take notes. I think it might be worth a try.


Hi Doug,

Actually, I just used a DVM across the emitters.

However, you are correct about the limitation - the approach does not yield useful data when signal is going through the amplifier. So one must interrupt the signal to take the measurement. My main interest has always been in seeing what happens to the bias after a "hot" interval has occurred and then gone away.

I believe that the thermal variations in many output stages as a result of this kind of thermal shock can be responsible for degraded amplifier sound that may not show up in conventional lab testing where the amplifier may be properly biased most of the time.

Only a 10 degree C mistracking can cause the nominal 26 mV bias to be off by 22 mV. This can be especially disastrous if it is in the direction of under-biasing the output stage. Although over-bias and consequent gm-doubling is to be avoided, it is, in my experience, less audibly bad than under-bias.


Cheers,
Bob
 
Sorry I made a mistake.

The data you gave are for base currents and not for collector currents. It is more difficult to interprete because of Hfe variation with temperature.

Do you have Vbe data at fixed 100mA and 10 mA collector current for 25°C and 100°C temperatures. These are 4 static measurements. The 10 mA is to make the Pease check

Thanks

JPV
 
jgedde said:
Here's the Vbe tempco data for the 4281/4302:

NPN NJL4281 (Average of 5 units)
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.469V
27ºC 1mA 0.548V
27ºC 10mA 0.635V
27ºC 100mA 0.730V

100ºC 100uA 0.279V -2.60mV/ºC
100ºC 1mA 0.380V -2.30mV/ºC
100ºC 10mA 0.489V -2.00mV/ºC
100ºC 100mA 0.603V -1.74mV/ºC

PNP NJL4302 (Average of 5 units):
T Ib Vbe Tempco
------------------------------------------------------
27ºC 100uA 0.443V
27ºC 1mA 0.526V
27ºC 10mA 0.625V
27ºC 100mA 0.728V

100ºC 100uA 0.259V -2.52mV/ºC
100ºC 1mA 0.359V -2.29mV/ºC
100ºC 10mA 0.473V -2.08mV/ºC
100ºC 100mA 0.600V -1.75mV/ºC


John

Could ypu please do it in smaller steps of Ib?

Stinius
 
JPV said:


The tempco (-2mV/°C) is defined at Ic ( collector) constant. It is also in this mode that it is used with a Vbe spreader/stabilizer.
Stepping with Ib gives difficult to use data because hfe is changing with T in an unpredictable ( analytically) way within and from sample to sample.

JPV

Yes I know that, but it seems like John is measuring the Vbe with constant Ib and not constant Ic. It would be best if he used constant Ic.

Stinius
 
All,

I have started temperature testing of JPV's 3xxx series ThermalTrak diodes. -25 is complete. What I can tell you at this point is that it appears the diodes in 3xxx are definitely not the same as those in the 4xxx series...

The -25 curve agrees very well with the curve in the NJL3281/1302 datasheet. I was succesful in modifying the test setup to collect data down to 100 uA...

John
 
jgedde said:
All,

I have started temperature testing of JPV's 3xxx series ThermalTrak diodes. -25 is complete. What I can tell you at this point is that it appears the diodes in 3xxx are definitely not the same as those in the 4xxx series...

The -25 curve agrees very well with the curve in the NJL3281/1302 datasheet. I was succesful in modifying the test setup to collect data down to 100 uA...

John

Great!!

With you test tools can you measure Vbe drift under constant collector current ?

JPV
 
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