Mosfet driver IC's

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Hi Tim,

Looked that you tried to speed up, the discharging of the mosfet's gates, by improving not just active clamps bipolar.

But according to my simulation, also Chris's seen that the discharging is already at that top speed.

I am fully agree with Lars, IMHO the only way is using JFET may be?

This is my last simulation. What I tried to do here is to share dissipation between Q6 and Q13 to get more current to drive the gates. Hence I can use smaller R6 and R8, also R8 and R11.

I also move the reverse bias for Q9 and Q11 directly to the collector of Q8 and Q10 to get fast off Q9, Q11. Also independence of gate charging.

By new arrangement, the control for dead time is the only by VR1 that in series with R1.

But it is still on simulation, but looked better than before.
Sadly I have no scope too.....! :bawling:
 

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Hello Mr. Kartino,

Are you sure this simulation works OK? Cuz I doubt it. I didn't have all the models you used so I had to make a few changes there, but I see definite error in the casdode circuit.

I made a few changes though and so far I can't believe how good it's working ......... something's got to be wrong?!?

Will post it after I beat it around some more..... sadly, it's also giving me some crazy new ideas.
 
hi kartino,
i tried a gate driver - about same circuit - and it works fine, with low load 🙂
so with irf530 at +-40v no problem.
but more votage, more problems...with irf640 at +-65 switching is too slow, fets loosing about 2w, gate seems like a 10nf cap !
to get it running at +-80v , driver has to be faster, but i have no idea , who to do it (without more components, driver ic, much more current drive ), because : driving a 5nf cap works fine, about 100ns switching, but not the irf640; whats so different (gate is like a cap, or )?
 
Hello,

A contribution with some lateral thinking.
- The recent thread by Kanwar/Workhorse on a driver stage might be interesting here. A quote from halfway this thread: ‘The Driver stage is actually a PUSH-PULL type..which ACTIVELY TURNS-OFF the FET, thus eliminating the Cross-Conduction and improves the Transient response at HF’ More at: http://www.diyaudio.com/forums/showthread.php?threadid=56833&perpage=10&pagenumber=9

- One other angle to enrich the reflexion process on driving mosfets is from the tubes world, where a grid choke apparently can help to drive an output tube more easily. This instead of the traditional grid resistor. I don’t know if/how this can be translated into solid state. Maybe someone else can?

My two cents, Arjen.
 
Hello Chris,

It is just on simulations, but IMHO what i've did make better than it was.

Hello Alf. I see you also working on the same "UcD". See my idea to share the dissipation for Q3 and Q11 at your schematic. Also IMHO R7, R9, R10, R12, use smaller value to get faster switching. Of course you need to set again the value for R6 and not to give much dissipation to Q11. (VCE almost -rail to +rail).

hi, do you think you have enough supply for your gates?

Regards,
kartino
 
classd4sure said:
He's not using that as a switching amp, we're talking a whole new ballgame. Actually that whole design is heavily borrowed upon from a switching amp, the mosfet needs to be actively held off.


Hi,

That amp is a Linear one not switching type, its driver configuration is based on exactly as in switching amps to improve the performance and utilize the mosfets in better way in Linear Domain...

K a n w a r
 
Hi Tim,

base on LTSpice file from you, looked that your overall speed at about 200kHz at rate, far from mine that 300kHz at rate. What's wrong with the simulation?? 😕

You also have problem for dissipation for Q13, for higher voltage,

waiting good news from you! :firefite:

regards
kartino
 
Here's my two cents worth on the discrete driver problem: :2c:

The high side driver always has a node that "sees" the entire voltage swing of the output stage added on top of the gate voltage swing.  Since i = c dv/dt, the current required to slew this node at the same speed as the equivalent node of the low side driver is greater by the ratio of the gate drive voltage swing to that of the output voltage swing (plus the gate drive voltage swing).  This is a manifestation of the so called "Miller" effect (it makes the high side node's capacitor appear to be much bigger than it really is).

The above is a best case scenario.  When there is a significant time delay through the driver signal chain, then the Miller effect may be delayed as well and show up either as a transition "oscillation" where the output bounces back and forth several times instead of making one clean jump, or as a "sticky" transition lockout that limits the minimum output pulse width.  Obviously, the former is very bad from both a noise and switching loss point of view, whereas the latter is usually very tolerable (often this effect, which is actually a form of positive feedback, speeds up the transition, lowering switching losses).

Which one of these you get depends on the polarity of the signal on the dv/dt sensitive node of the high side drive.  Relocating or adding in an extra inversion within the drive chain can change a bouncy drive type to a sticky drive type.

By the way, splitting the dv/dt voltage transition across two transistors seems like a very worthwhile idea as it should reduce the Miller effect to half of what it was before.

Regards -- analogspiceman
 
I love your posts. I almost always learn something new from them and on the rare occasion that I don't learn something new I see something I already knew from a different angle and so gain a better understanding.

:worship:

Hi Tim,

base on LTSpice file from you, looked that your overall speed at about 200kHz at rate, far from mine that 300kHz at rate. What's wrong with the simulation??

You also have problem for dissipation for Q13, for higher voltage,

waiting good news from you!

regards
kartino

😕 On my computer my sim shows 370kHz not 200kHz. On my sim worst case Q13 dissipation with +-50v rails is ~150mw, not great but acceptable.

Do you have the same models? Are you running with any special settings enabled?
 
Hi Kartino,

Can't see how your cascode works at all, and it does not simulate for me, there's no high side drive at all.


It requires very little to fix, replace the zener D31 with three series diodes, seemed to work best, remove R32. Put a decoupling cap from the base of Q13 to the negative rail. R31 can become a rather high value resistor (100k if you like, even more) or even another open collector mirrored off the existing current source as an active pullup.

That does simulate, and very well too. I also used the same type of cascode for the low side to keep things well balanced.

Your tweak to the driver is very interesting.

Regards,
Chris
 
On Kartino's schematic:

Reduce the value and ESR of C2 and high side gate drive will simulate properly without waiting for an eternity. Or optionally add a .ic statement.

The cascode is basically the same as mine, it isn't meant to hold the voltage on Q6's collecter constant, it's meant to halve the voltage swing, that way the cascode doesn't limit speed. Both transistors see equal C-B voltage swing meaning both are equally slow (assuming you use the same kind of transistor in both positions).

Throw out D31 (or replace with a couple normal diodes, like you said), connect R32 straight to ground, and add a buffer to speed up the cascode base drive and you pretty much get my circuit.
 
:bawling: :stop: I must check what happen with my LTSpice.....

For Chris, I agree to replace the zener with 3 diode in series, but for R32, I will keep first to try at real.

For Tim, the Q13, I mean not for 20V rails, let's try for above 30V. It may be cool. I don't know what happen with my sim, I must check it.

But basically my idea is if we can share the dissipation such Q13 - Q6 of my circuit, or maybe more than 2 bipolar with equally, we can increase the current to drive the gates. Hence we can use smaller R6-R8, R9-R10 to speed up the gates. At least we have stable gate drive at that speed. (predicted?)

It is necessary when we use high voltage rails. This is the other limitation for discrete driver.

It our challenge for other than use IC driver.

Best regards,
kartino
 
Hi Tim,

But still lot of delay.... (or my sim again?). Do you ever try at real circuit?
Lets forget the sim if you satisfied with the real result.... :cheerful:

Actually I interested with your circuit too for the gate design. I have plan to try after hear how good your amp's sound. I am waiting... :clock:

Best regards,
Kartino
 
Hi, Tim,

I've spent time to fine tuning the circuit. Even I got best simulation, but your arrangement seems can not beat the original UCD arrangement.

Anyone have comment?

Hence for me the original UCD arrangement is the best and simplest one for discrete class-D. Now I am still wondering how this simple circuit produce that good sound.

Best Regards,
kartino
 
kartino said:
Hi, Tim,

I've spent time to fine tuning the circuit. Even I got best simulation, but your arrangement seems can not beat the original UCD arrangement.

Anyone have comment?

Hence for me the original UCD arrangement is the best and simplest one for discrete class-D. Now I am still wondering how this simple circuit produce that good sound.

Best Regards,
kartino

"Flat, fully load-independent
frequency response"

" Very low, frequency-independent
THD"

Extremely short signal path, with mostly all active components working in switch mode.

Design also has near perfect symmetry. It's not to say the known drivers dont' need improving though, it's a worthy cause.
 
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