Between 1.8V and 3V would be more realistic.Eva said:These diodes are said to feature nearly zero recovery time and little or no recovery current, but what they don't say is that the nominal voltage drop at rated current is between 3V and 5V,
12A 600V sic-diode from infineon for example have voltage drop at 12A 1.5V typ. at 25c and 2.1V max. at 100c. Now if you compare that to ultra(hyper)fast recovery Si-diode like ISL9R1560PF2 designed for boost-converter use you have 1.8v typ at 15A and 25c.
I agree that SiC-diodes are expensiive, 12A diode costs 17 euros.
jackinnj said:EVA -- have you seen this -- from ST Micro
http://www.st.com/stonline/products/literature/ds/10854.pdf
I have recently analysed and discussed that here:
http://www.diyaudio.com/forums/showthread.php?s=&threadid=76958
I can't see an easy way to implement it in four quadrant systems (high voltage >250V class-D), though.
http://www.diyaudio.com/forums/showthread.php?s=&threadid=76958
I can't see an easy way to implement it in four quadrant systems (high voltage >250V class-D), though.
Eva said:USA patent system is a joke. These documents show the exact same thing patented three times by three different inventors!!! Damn, I want my patent too!!
Copy-paste, send the check.
Yes. They are many examples and apparently they are no complains…
Anyway the circuit seems to be a working solution.
Here: http://www.crestaudio.com/media/pdf/lt_schematic.pdf on page 5 only passive snubber and no dead-time circuit.
The circuit looks like the US4724396.
Anyway the circuit seems to be a working solution.
Here: http://www.crestaudio.com/media/pdf/lt_schematic.pdf on page 5 only passive snubber and no dead-time circuit.
The circuit looks like the US4724396.
Crown BCA patent is similar too much also.TOINO said:Yes. They are many examples and apparently they are no complains…
Anyway the circuit seems to be a working solution.
Here: http://www.crestaudio.com/media/pdf/lt_schematic.pdf on page 5 only passive snubber and no dead-time circuit.
The circuit looks like the US4724396.
I have seen a similar patent to ESBT years ago and didn't understand why will it work. If the bipolar transistor goes to saturation, the bias supply will feed his c-b junction's recovery current. I think the c-b junction could be damaged if the MOSFET is switching off too fast. ?
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