of course I added the +-24V to 48V and with 1.2-1.4A bias the F7 is in the ballpark of F5 and all the others concerning power for one Mosfet.
As you wrote......😀
so PR I see no danger.....!
That looks just pretty good: somewhere around 0.1% THD with H2/H3=10dB. I assume that spectrum is for 1W into 8R at 1kHz.
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ya picodumb^2
what's with T03 ?
Ok smart ****. Hahahaha
Are you sure you are not my older brother. Always razzin poor pico
hahahahaha
Hey Generg, My world was too, until Infineon bought them and they laid me off... I'm back working again but IR is no More! (since the first of 2015 Actually). From what I know, Buying Vishay parts is your best bet if you want IRF240/610 types. That would be all the parts from 2005 on I believe 😀
IR did have an GaNi part that is promising, like a SIT, but, knowing what goes on there it aint worth chasing. There is a model of LG Surround system that actually has an IR GaNi part and a Vacuum state part in it??? Interesting...
I have figured out the equations for the 3 circuit topologies shown in post #269 http://www.diyaudio.com/forums/pass-labs/275921-first-watt-f7-review-27.html#post4565114. In all cases the solution is that which makes the output insensitive to the load resistance, i.e. infinite damping factor. These equations are simple enough that the topologies can be compared.
Attachments
Most excellent. In what appears appears to be your copious free time, you
might want to take a look at the inverting amplifier case as well, as I found
it the simplest.
😎
That was A.R.S.E (nothing worse)
I'll use smarty pants in the future to avoid possible misinterpretation of censoring. hahahahaha
Mine was a little different than that.
Nelson is far more generous than me. That was my other secret.
Nelson is far more generous than me. That was my other secret.
Rint is the internal resistance of amplifier, and gm is is its transconductance. In my earlier posts I was incorrectly using a voltage=>voltage amplifier model, where Rint is necessary parameter to characterize its behavior. With the correct Voltage => current model, gm incorporates the output MOSFET transconductance and internal resistance model into a single gm parameter.
R1 is an free parameter in the design for use both as a gate-stopper to the JFETs and to tune the -3dB rolloff of the amplifier.