Assemblage Power Amp

Your circuit from post #1 is good in preventing thermal runway.
 

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The IRF's need much more bias spread than the Laterals, they are also more critical in terms of thermal management, for this purpose I would strongly recommend the Lateral feats (They are sold through Profusion they also handle web sales in small quantity)

In the Prufusion site I can only see ECX10N20R and ECX10P20R.... should I order those ?


How do I determine and set the bias current on your schematic ?
 
Here are the models I use, for a follower i don't really think that it matters which model you use. as you will need to do real world adjustments to the Idle. and still with lat-fets it will be good to have the VBE transistor thermally close the the OPS.


.MODEL 2SJ162 PMOS (VTO=842.193M KP=20U L=2U W=21.3317M GAMMA=0 PHI=600M LAMBDA=20.7067M RD=837.199M CBD=2.96862N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0 TPG=1 UO=600 RG=50 RDS=1MEG )

.MODEL 2SK1058 NMOS (VTO=403.969M KP=20U L=2U W=29.7482M GAMMA=0 PHI=600M LAMBDA=184.988F RD=60.8251M CBD=2.56138N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0 TPG=1 UO=600 RG=50 RDS=1MEG )

.MODEL ECX10N16 NMOS (LEVEL=1 VTO=-66.415M KP=20U L=2U W=76.3794M GAMMA=0 PHI=600M LAMBDA=3.44617M RD=244.181M RS=178.517M IS=10F CGSO=100P CGDO=100P TOX=0 NSUB=0 TPG=1 UO=600 RG=367.902 RDS=16.0012K )

.MODEL ECX10P16 PMOS (LEVEL=1 VTO=56.1959M KP=20U L=2U W=49.9039M GAMMA=0 PHI=600M LAMBDA=16.6941M RD=458.28M RS=214.674M CBD=1.00674N IS=10F CGSO=100P CGDO=100P TOX=0 NSUB=0 TPG=1 UO=600 RG=35.8793 RDS=1MEG )
 
Thank you so much Miib

It sims much better then my other atempts.... I will do build it as soon as I get the fets.

Please let me know if I can use ECX10N20R and ECX10P20R.

PS: I have read most N and P fets have different Ciss so we should use different values for gate stoppers.... does it matter here ?