The Very Best Amplifier I Have Ever Heard!!!!

I just got a stack of exicon lateral mosfets both TO3 and TO247 and the level of matching is excellent.
I have found with IRFP240/9240 there is quite a large spread of Vgs and you need to buy many more to get good matching. Not so with these laterals.

I will say though it is hard to get matching between N and P for the laterals.
The N's tend to all turn on with Vgs of around 0.18V while the P's turn on around Vgs of about 0.60V. This is just using my memory here. I have the results written down at work.
I will double check to tomorrow.

To give you indication out of 16 N channel mosfets tested, I got an average of 0.18V the worst deviation was 0.16V (-0.02V). This is threshold Vgs (Id=2.5mA)
I will do further matching at several Id values eg 50mA, 100mA, 200mA, and 500mA later

Thanks a lot, for info
 
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OT excuse

Sorry my mistake.
Only 70mV spread at 2A 5.01Vgs to 5.08Vgs.
Now run these two in parallel with the same Vgs and see how far out Id will be.
Comparing different Vgs is not the same as comparing Id at identical Vgs.

OK, app accepted. 😉

Yeah AndrewT, that would be debatable but I have to remind you that these are not usual mosfets (Id) but BIGBT compound components having NPN/PNP BJT pair on output (Icnpn + Icpnp). You can see comparison of emitter resistors voltage drop in the table and these (β) were actually paired/matched for the reason of 50:50 output current spread. 🙂

What most surprised me is that IRF mosfet part of BIGBT, were not even tested nor paired but just taken from the supply bag randomly. Imagine how perfect results would be achievable if IRF's would have been matched. 🙄

At last but not least the energy transfer function of actual BIGBT is a leap larger than at power mosfet of any kind at only a fraction of input capacitance. Yeah, I can see only advantages for audio amplifier applications ... 😎
 
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......... I have to remind you that these are not usual mosfets (Id) but BIGBT compound components having NPN/PNP BJT pair on output (Icnpn + Icpnp).
Ah! BIGBT is your version of Insulated Gate Bipolar Transistor (IGBT).
The argument still stands. The high transconductance multiplies the apparent Id mismatch for identical Vgs.

If you want to show how well matched your devices are or compare anyone else's devices, then you must hold Vgs constant and Tj constant and then show the Id differences.
A few percent difference in Vgs is NOT the same as a few percent difference in Id.
 
Josip,
If you change a lot then amp could become unstable. You could wait for practical result of this amp( some guys are bilding it).
If one pair of output MOSFET are used for sure you should not use +-80V of the power supply. Insted 2N5565, LSK389 could be used.
dado
 
Josip,
If you change a lot then amp could become unstable. You could wait for practical result of this amp( some guys are bilding it).
If one pair of output MOSFET are used for sure you should not use +-80V of the power supply. Insted 2N5565, LSK389 could be used.
dado

I am building a Mimesis 3. And if I understood Zen Mod correctly I can build it with one pair of fets because I do not need 200W
 
Zen Mod
question ,can be used in place of 2N5565 transistor 2SK389 and what changes should be made? I mean resistors .Some progress
Alex.
 

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