Bootstrapped amps. DX/Aksa/RCA/etc...

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So what? Calculate the input impedance of the OPS or simulate the circuit - if you see some current, close to 100mA, at the VAS stage output - this design does not make sense as distortion level will be enormously high.
Normal VAS current is 5-10mA and the more constant it is - the higher quality the amplifier is.
 
Does anyone see any issue with my using a TO92 device as my VBE? Would the 2n5551 be suitable to use there?

Nothing wrong with that idea. I did exactly what you suggest: http://www.diyaudio.com/forums/solid-state/196973-tgm5-all-bjt-simple-symmetric-amplifier.html

Post #169 shows a TO-92 device face down onto the power device case. The power device is bolted to the heatsink, the pcb is bolted down over the top of the power devices. There's a hole in the pcb to expose the surface of the power device package. The TO-92 device is soldered onto the top of the pcb and bent over so that it can be placed in contact with the power device package.

I used a 2N3904, you can use almost any 'regular' transistor in this application.
 
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Yes, no problem with using TO-92 device, like 2n5551, it's just not so convenient to attach it to the heatsink. I often use MJE340 (TO-126) because I have experimented with them a lot, so I know some good configurations, suitable for different OPS arrangements, plus it's easy to screw to the heatsink, plus I've got a ton of them in stock 🙂

It's rather difficult to say why you've got noticeable difference between the channels.
But you can start from measuring the VAS current in both thannels and Vce of the bias spreader. Are they close to each other, or somewhat different?
 
Yes, no problem with using TO-92 device, like 2n5551, it's just not so convenient to attach it to the heatsink. I often use MJE340 (TO-126) because I have experimented with them a lot, so I know some good configurations, suitable for different OPS arrangements, plus it's easy to screw to the heatsink, plus I've got a ton of them in stock 🙂

It's rather difficult to say why you've got noticeable difference between the channels.
But you can start from measuring the VAS current in both thannels and Vce of the bias spreader. Are they close to each other, or somewhat different?

All the devices are clamped to the heatsink using a single bar of aluminum that lays over the outputs. In the middle are the VBE and drivers. A stiff foam pad presses them to the heatsink. A TO92 would work here, mechanically.
 
Put it between the positive supply rail and the top end of the VBE multiplier / bias spreader. The bottom end of the VBE multiplier goes to the NPN VAS transistor's collector. Figure attached. C2 is the bootstrap capacitor.

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Like some power IC's, eg. TDA7293, TDA1514A, various japanese types and even the very old TBA800/810. The TBA810 have the output driver and various internal CCS all bootstrapped to output, in despair to better its raw efficiency. Then the driver fully saturates and the N-P charge storage begins to show...
Personally I prefer to lose some voltage in order to not have a deep saturation (the VAS saturates but at least is a small transistor), unless the output is a MOSFET. That said, one of better sounding transistor amplifiers I made is the bootstrapped VAS...
 
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2SC1815 pdf, 2SC1815 description, 2SC1815 datasheets, 2SC1815 view ::: ALLDATASHEET :::

One example, being ECB.
Almost all 2SA/SB/SC/SD japanese TO-92 (no-RF ones) are ECB. So is true, BCE is very rare (hmmm. now I understand that you need a true BCE pin-out, not a reversed ECB).

Of course, for BCE use is only a matter to invert position, if don't have mechanical complaints.

I believe some 2Nxxxx being BCE, if memory serves now...
 
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2SC1815 pdf, 2SC1815 description, 2SC1815 datasheets, 2SC1815 view ::: ALLDATASHEET :::

One example, being ECB.
Almost all 2SA/SB/SC/SD japanese TO-92 (no-RF ones) are ECB. So is true, BCE is very rare (hmmm. now I understand that you need a true BCE pin-out, not a reversed ECB).

Of course, for BCE use is only a matter to invert position, if don't have mechanical complaints.

I believe some 2Nxxxx being BCE, if memory serves now...

It's only to mount a TO92 where the BD139 is. To have the TO92 flat side against the heatsink, it would need to be BCE because a BD139 is ECB.

I suppose I can use the round side and just put a thick thermal pad behind it.
 
It's only to mount a TO92 where the BD139 is. To have the TO92 flat side against the heatsink, it would need to be BCE because a BD139 is ECB.

I suppose I can use the round side and just put a thick thermal pad behind it.
Some time ago I assembled one germanium amplifier, and used a transistor for Vbe multiplier, and not a thermistor like original design (and make some other modifications). The Ge transistor are round-shaped, and sometimes have a internal tin-wisker "leakage" to case. I insulated the transistor body with a small plastic spaghetti, and put it against the heatsink with heavy use of copper thermal grease (one cooper/brown-coloured), pressed against the heatsink with a single stranded Cu wire 😱 (I made a couple of holes for that). One can use a cable tie.🙂
Even with the notorious know thermal dependence from Ge transistors, the quiescent current is rock stable.😎
So, I imagine a good result from a silicon transistor with grease and some gentle pressure against heatsink.
 
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