I have SSHV2 completed but still outside the Psu box, for an easy further fine adjust if in need. First listening was completed, and results exceed far above my expectations. Is been an overall improvement, I can't point on anything in particular, detail, imaging, scale or extension of extremes..etc.. everything has pushed up togheter to another level of performance!
Setings on SSHV2 are most less Vin to vout possible, I succed 77 Vout by only 83Vin in order to keep heat low. What a wonderful design it is.
Setings on SSHV2 are most less Vin to vout possible, I succed 77 Vout by only 83Vin in order to keep heat low. What a wonderful design it is.
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Pic below is the field coil speaker. One channel loaded already. Is top of the range, (100% handcrafted) Super Aero series. I was aware from the luthier themselve Mr. Oleg Rullit, do no add any regulator and keep the power supply simple. But proven not to be the case when using SSHV2.
Thanks so much for kind attention here, euro21, Salas, and Felipe for encouraging me to get out of the shelve this parts, collecting dust for too much years.
Thanks so much for kind attention here, euro21, Salas, and Felipe for encouraging me to get out of the shelve this parts, collecting dust for too much years.
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Vgs (on) is not fixed, it grows with the more mA. In general its little few volts. For each different Mosfet type there's a spec range and curves in the datasheet.
I see at datasheets the range is between -1,5 till -5V, so if we are aiming for maximum mA we have to select one with or more aprox. to -5V right?
Thanks Bela I have both depletion mosfet, using your schematic Jordi will have the mA that needs: 150mA for load + 20mA for SSHV2?
Why needs 390V B+?
10K is the load+SSHV2?
Why needs 390V B+?
10K is the load+SSHV2?
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Usually the more Vgs (off) a tester measures the more the Idss capability. So when running it develops more Vgs also.
It's only the test to show Vgs.
If you want 170mA, try to use more beefy FET than 100mA capable 01N100.
Hi, Felipe is noticed already I got SSHV2 again at half the current. Really appreciate assistance here.
-Based on settings:
*Vin = 95Vdc
*R4 = 0R
*Rload= 500R
-I measure readings:
T.P.= 94mA. (not reach 170mA)
Vout= 42VDC (not reach 77Vdc.)
Q1 Vds.= 96Vdc
Q1 Vgs.= 1,4Vdc
Q2 Vds.= 1,4Vdc
Q2 Vgs.= 0,1Vdc
-Based on settings:
*Vin = 95Vdc
*R4 = 0R
*Rload= 500R
-I measure readings:
T.P.= 94mA. (not reach 170mA)
Vout= 42VDC (not reach 77Vdc.)
Q1 Vds.= 96Vdc
Q1 Vgs.= 1,4Vdc
Q2 Vds.= 1,4Vdc
Q2 Vgs.= 0,1Vdc
If you use DN2540 as "lower" FET, in the datasheet the saturation Id current at -about- 1.5V Vds, 0V Vgs is about 85mA.
That's why I suggested to use duplicated -parallel- CCS (the other reason is the Q2 limited current capacity).
That's why I suggested to use duplicated -parallel- CCS (the other reason is the Q2 limited current capacity).
I completed another board, same settings, including Q1 DN2540, and Q2 IXTP02N50D.
It measures very close results 88mA/40Vdc.
So I concluded the two boards are healty, and just the desing can't reach my demands.
Silly as it can be, I achieved better specs yesterday when Q1 was lose sitting on their row pins shoket, or later when same Q1 was cold soldered.
It measures very close results 88mA/40Vdc.
So I concluded the two boards are healty, and just the desing can't reach my demands.
Silly as it can be, I achieved better specs yesterday when Q1 was lose sitting on their row pins shoket, or later when same Q1 was cold soldered.