Do we want to use the 669A/649A drivers, or do we want to use separate smaller drivers for each FET?
- keantoken
- keantoken
Krisfr, why not put 10n-100nF decoupling on the collectors of Q15 and Q22?
If you put the offset adjust at R6/R7 rather than the LTP sources, VAS matching won't matter but your FETs will have to be matched. My preference is to match the LTP and use anything for the VAS.
- keantoken
Use "anything" for the VAS ??? that is what we hear.. man. the drivers/OPS just condition this for use with our primitive "atmosphere movers" (loudspeakers). ??😕😕 I listen to my drivers biased in class A with headphones even before I attach my OP devices for final biasing.
As far as Krisfr's adaptation of that circuit a few posts back , with the MPSA92/42 change , re-compensation would be in order. Nico's full wilson mirror and the beta enhanced differential will only "shine" with careful design and choice of operating points. I agree with the 1 pair of drivers ... my choice would be the 2sc4793/sa1837 in this application.
OS
OS, look up the 2SD669/B649. They have better specs than the 4793/1837.
They can be gotten from Profusionplc.com
Of course you have to pay $20 to get an order of 100...
http://www.utc-ic.com/spec/2SB649-A.pdf
http://www.utc-ic.com/spec/2SD669_A.pdf
http://www.utc-ic.com/spec/2SA1837_TO220F.pdf
http://www.utc-ic.com/spec/2SC4793.pdf
- keantoken
They can be gotten from Profusionplc.com
Of course you have to pay $20 to get an order of 100...
http://www.utc-ic.com/spec/2SB649-A.pdf
http://www.utc-ic.com/spec/2SD669_A.pdf
http://www.utc-ic.com/spec/2SA1837_TO220F.pdf
http://www.utc-ic.com/spec/2SC4793.pdf
- keantoken
OS, I meant I wouldn't bother matching the VAS. Not that I'd know how much it matters.
What do you mean about operating points? If I worried about operating points I would run nearly every transistor at 10-30mA where Hfe and Ft are best
- keantoken
What do you mean about operating points? If I worried about operating points I would run nearly every transistor at 10-30mA where Hfe and Ft are best
- keantoken
If you don't want TO92's as drivers, Toshiba A1930/C5171 would be a nicer choice in TO220.
(personally, i still find the Zetex FZT series 857/957 sexy beasts, + handle more current at 200Vce than the 20W Japanese biggies)
(personally, i still find the Zetex FZT series 857/957 sexy beasts, + handle more current at 200Vce than the 20W Japanese biggies)
How about some (a little) degeneration for the VAS or at least holes for the resistors if we need them?
Jam
Jam
If you don't want TO92's as drivers, Toshiba A1930/C5171 would be a nicer choice in TO220.
(personally, i still find the Zetex FZT series 857/957 sexy beasts, + handle more current at 200Vce than the 20W Japanese biggies)
Had a look-see Zetex, new to me but I like what you propose
The Zetex devices are excellent choices. You cool them by soldering to an enlalged plane on the Pcb.
I only wish they came in a TO-126 case(old school😉)
Jam
I only wish they came in a TO-126 case(old school😉)
Jam
Krisfr,
Nice......I never knew they existed. I owe you one.
Jam
And they are more than twice the Ft of 15032, 33
IF and only IF we go to a thermal feedback for bias control, I would like to try a opto coupled one to minimize the induction into the feed back wires of the magnetic currents in the output area. Has anyone ever seen or tried that? Just get the information and eliminate the stray inductance.
IF and only IF we go to a thermal feedback for bias control, I would like to try a opto coupled one to minimize the induction into the feed back wires of the magnetic currents in the output area. Has anyone ever seen or tried that? Just get the information and eliminate the stray inductance.
Give us more cluses of what you are proposing.
One other thought.......
Since we are essentially buffering the VAS, could we not run the VAS at higher currents and since we have symmetrical drive due to the current mirror could we not dispense with the drivers and drive the mosfets directly. This would get rid of an extra junction and remove a potential problamatic pole. Just a thought.
Jam
Since we are essentially buffering the VAS, could we not run the VAS at higher currents and since we have symmetrical drive due to the current mirror could we not dispense with the drivers and drive the mosfets directly. This would get rid of an extra junction and remove a potential problamatic pole. Just a thought.
Jam
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One other thought.......
Since we are essentially buffering the VAS, could we not run the VAS at higher currents and since we have symmetrical drive due to the current mirror could we not dispense with the drivers and drive the mosfets directly. This would get rid of an extra junction and remove a potential problamatic pole. Just a thought.
Jam
Hi Jam, I suggested getting rid of the drivers early in the thread and you do not have to increase the VAS current either.
Regards
Nico
On the output devices heatsink there is a temperature that is linked to the output devices temperature at any given time based on output of the amplifier. Now take a diode, a 4148 or similar and place it on the heatsink. With wires, take the voltage drop across said junction and transfer it to the bias setting transistor of the amp. Normally the wire that transfer that information, also pickup the large magnetic fields of the output devices of the amplifier. This can start a loop between the output and the bias setting stage. By opto isolating this diode, you eliminate the induced voltage that put unwanted signals into the bias setting system. Also if feed to a op-amp you can tailor the action of the bias to reflect BETTER the control the thermal runaway system. I have done this before but I lost my notes from a FEW years ago. It was the best track of thermal info I had seen. And it could be tailored for optimization.
A lateral mosfet is not prone to thermal runnaway. Maybe a thermal breaker in case the heatsink is not suited to the listening level.
10-30mA for the to-92's ?? .. poor things. 1-2ma is where the 1845/992's develop the best Hfe , run cooool ,too. For the VAS , why not to-126's ?? then we can crank them up to 10+ mA and drive them laterals direct.OS, I meant I wouldn't bother matching the VAS. Not that I'd know how much it matters.
What do you mean about operating points? If I worried about operating points I would run nearly every transistor at 10-30mA where Hfe and Ft are best
- keantoken
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