Enhancement mode JFET

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Replace JFET with "silicon JFET" and I would agree, at least for standard processes. For wide band gap semiconductors, discrete power JFETs with Vp>0 are commercially available.

These devices are allowing a much wider positive Vgs range, and the transconductance is much improved by the high carrier mobility in such semiconductors (like SiC), so no huge device area is required.
 
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