Replace JFET with "silicon JFET" and I would agree, at least for standard processes. For wide band gap semiconductors, discrete power JFETs with Vp>0 are commercially available.
These devices are allowing a much wider positive Vgs range, and the transconductance is much improved by the high carrier mobility in such semiconductors (like SiC), so no huge device area is required.
These devices are allowing a much wider positive Vgs range, and the transconductance is much improved by the high carrier mobility in such semiconductors (like SiC), so no huge device area is required.
Ordering a white Merlot at the table, you'll get no Merlot whatsoever, but it will be white instead.
