As usual, this guy doesn't have a clue of what's really going on (normal: he belongs to the overunity brigade).
In fact, transistors are much more effective when used in the direction they're supposed to work.
Of course, when you work at 10V, you are forced to use them in reverse, otherwise no breakdown, and no negative resistance occurs.
But stacking a number of reverse-biased transistors to reach higher voltages is pretty silly, when a single transistor with a suitable B-E resistor can do, and much more efficiently: the negative resistance stems from the ratio of Hfe's at different currents, and the direct Hfe is much higher than the reverse one.
With a single transistor, the effect is at least one order of magnitude larger than with multiple ones in reverse.
I thought it was something related to breakdown or avalanche conditions ? If it's just the variation of the Hfe, then it's pretty pedestrian, right ?
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