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How calculate the Rmu resistor in an hybrid Mu follower

I think you took this diagram and the equations from here (page 16). I hoped this document would provide a bit more context on what Ale Moglia means by "totem-pole current balance", and why gfs = gm. Also, I am not sure if Gm (tube transconductance) and gm are supposed to be the same thing, or if that's a typo. Same questions for Gfs (FET transconductance) and gfs.
  • What is "totem-pole current balance" supposed to mean?
  • What are gm and gfs in Ales equations?
  • Why gm = gfs?
Oh, and... looking at the circuit shown in your previous post, I see that it's just a plain CCS (as shown on the left of page 14), not a mu-stage with the DC blocking cap at the FET gate (right side on page 14).
 
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Ok, here goes my take on the mu-stage, and how to choose the Rmu value. I mainly post it here so I can find it again, and maybe someone else even thinks it's useful.

First of all, read Allan Kimmels article on the mu-stage. His description starts out based on a all-tube SRPP circuit, but that may not be necessary here. Consider the hybrid mu-follower circuit as in this diagram:

1718961973627.png



With no audio/AC signal applied to the input, the gate of FET Q1 is grounded, and so the anode voltage of the tube is biased to a slightly negative DC voltage below GND (as determined by the Vgs value of the FET and the slight voltage drop across Rmu). The DC current flowing through the tube, Rmu and the FET is controlled by the bias volage applied to the grid of the tube.

Once an audio/AC voltage is applied to the input, any dynamic change (dVA) in the voltage at the tube anode results in a similar voltage change (dVS) at the FET source pin according to the voltage gain (A) of the source follower (typically A = 0.99...):

dVS = A x dVA

The corresponding change of the current through the mu resistor (Rmu) is:
dI = (dVA-dVS) / Rmu = (1-A) x dVA / Rmu

The dynamic load resistance of the active load as seen by the tube anode is:
r0 = dVA / dI = dVA / [ (1-A) x dVA / Rmu ] = Rmu / (1-A)

With gfs the transconductance of the FET and Agfs x Rmu / (gfs x Rmu + 1) and Rmu >> 1/gfs:
1-A ≈ 1 / (gfs x Rmu + 1) ≈ 1 / gfs / Rmu

Therefore:
r0Rmu^2 x gfs or Rmu ≈ sqrt(r0 / gfs)

The goal is to make the load line for the tube as flat as reasonably possible. In other words, r0 must be much larger than the plate resistance rp of the tube. r0 = 50 x rp seems like a reasonable point of diminishing returns. For example, consider a mu-stage using a tube with rp = 1 kΩ and a FET with gfs = 1 A/V:
Rmu ≈ sqrt(50 x 1 kΩ / 1 A/V) ≈ 220 Ω

A larger Rmu value would also work, but wouldn't provide any substantial improvements of the audio performance of the mu-stage. A larger resistor means higher voltage drop, more heat, and also more feedback in the CCS, which may give rise to oscillation in the mu-stage.
 
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From Ale's earlier postings (2018):

Zout from the mu output can be approximated to Rmu/(1+Rmu*gfs) unless I screwed up the formulae.
This makes sense as when gfs*Rmu>>1 then it converges to 1/gfs

I’m scratching my head when I did a simulation in the past. I measured on Spice about 715R of output impedance with an Rmu of 470R. I measured gfs of 35mS for an idle current of 10mA. This is about 27R according to the formula above.

Also when Rmu converges to 0, so should Zout. Assuming gfs is maximum at this point as VGS=0.

Then:

Well, I ran a quick test with Spice using a BF862 lower device. The formula works well if Rp (anode resistance) is zero. Otherwise when Rp isn't zero, I can see a difference of a factor of (Rp/Rmu+1). Need to review the formulae again as it seems like the Zo is:

Zo=Rmu/(1+Rmu*gfs)*(Rp/Rmu+1)

When you have lower devices like BSH111BK or BSN20BK that have 400mS at 30mA (measured), the impact of Rp in the output impedance is very low. For example if we have a 4P1L in triode (1600R as Rp) then the output impedance should be about 11R.

and:

In summary, for a large Rmu:

Zout=Rs/(1+Rmu*gfs) or approximately 1/gfs (like a source follower)

When Rp (anode resistance) is much bigger than Rmu:

Zout = Rmu/(1+Rmu*gfs)*(Rp/Rmu+1) = (Rp+Rmu)/(1+Rmu*gfs)

which means that Rp is added in series to the Rmu before the bootstrapping effect of the lower jFET.

Attached is an example with the BF862 at 3mA using an Rmu of 100R and an anode impedance of 1K.

The above can be read in this post: https://www.diyaudio.com/community/threads/45-amp-build-direct-coupled.320418/page-6
 
The goal is to make the load line for the tube as flat as reasonably possible. In other words, r0 must be much larger than the plate resistance rp of the tube. r0 = 50 x rp seems like a reasonable point of diminishing returns. For example, consider a mu-stage using a tube with rp = 1 kΩ and a FET with gfs = 1 A/V:
Rmu ≈ sqrt(50 x 1 kΩ / 1 A/V) ≈ 220 Ω

A larger Rmu value would also work, but wouldn't provide any substantial improvements of the audio performance of the mu-stage. A larger resistor means higher voltage drop, more heat, and also more feedback in the CCS, which may give rise to oscillation in the mu-stage.

That sounds like as good an explanation as any. At some point thought for many FET's (taking the above example) the ≈ 220 Ω would be a minimum value. 1k is not significantly different, and won't lead to oscillation in the mu-stage in any case.

My experience has been that the resistor quality is critical. I used some fancy carbon ones but ended up swapping them out for some cheap metal film ones that were less noisy (and didn't drift).
 
That sounds like as good an explanation as any. At some point thought for many FET's (taking the above example) the ≈ 220 Ω would be a minimum value. 1k is not significantly different, and won't lead to oscillation in the mu-stage in any case.
The mu-stage in my amp did oscillate if the Rmu value was too high. See here.

My experience has been that the resistor quality is critical. I used some fancy carbon ones but ended up swapping them out for some cheap metal film ones that were less noisy (and didn't drift).
Can you provide some details on the resistor part? How about Vishay/Dale CMF55 types?
 
Interesting. Ale was also using AOT1N60 and posted something about oscillation here:
https://www.bartola.co.uk/valves/tag/aot1n60/

But he was using it for source follower duty. I never tried this FET. Seriously, 1k Ohm gate stopper for source follower should not make a difference, and I would not expect it to make any difference for the Rmu too. Ale went down to 100 ohm and claimed it cured his fuzz on his source follower. Maybe something else was going on? This FET has decent looking specs.

The metal films I was using were from our local electronics shop in Zurich - Pusterla. They are 2W and have an attactive size. But I discovered that certain values are noisy. They are slighlty more noizy than Kiwame metal films... I am now just using them for power supply ground reference, stuff where their noise can't make it to my speakers...

Vishay/Dale CMF55 are generally pretty good. I have been using CMF60 type for gridstopper/gatestopper for some time and they have been fine. Not as expensive as fancy parts such as the Takman's I like to use. BUT if you are working with tiny signals, then the Amtrans carbon film are also great choice. They are not as expensive as other boutique resistors (like tantalum) and even more quiet than the Vishay/Dale.

TDK's are also very good and super low on noise - but they are kind of big. I always try to avoid using carbon film due to the potential for the values to drift. But sometimes its unavoidable.

Matching (especially for precision phono) is always a pain...
 
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Thanks @mbrennwa , I have missed the thread has continued.

I checked with an E188CC and a J113 as low fet and seems your formula taking 1K for Rp with that tube, gave me with the Gfs of this fet: 1k65 Rmu . I took 1k5 1W metal film. Seems to work, hopping not gross error !

Btw, is there any interrest to take a low fet or mosfet with a mA output near the one of the tube as the circuitry is a follower ? The more mA of the low fet the better to drive RCA capacitive cables for instance ?
 
Not sure I understood Ales point for driving cables, tipically his préamps output.
Balancing the mA of the tube with follower fet mA, he wrote, but this is not a push pull circuitry, no?
Then inputed he liked very high curent low mosfet (BH11 etc serie) cause sounds better???

What are your expérience guys with that circuitry, have you à prefered still sourciller fet préférence? Better to use a higher current and lower noise than à j113 before à preamp, like the j310 for illustration?

Do you like better cathode follower than Mu follower or else to drive à pre?
Logic says the low impedance output winns, but sometimes ears prefer something else... ?
Maybe fets are not the more linear device while they cope well with tubes...
Hummm, i am off topic of my own op question ....
 
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