I build my own speakers from scratch, including winding voice coils.But you know the difference between theory and praxis? Theoretically none
But seriously - I know this hype around excessive damping since the seventies. It is a myth, and utterly boring. And I know that not one single person believing the contrary can be convinced by arguments.
You really need to proove that THEORETICALLY in the first place cause Pioneer a-09 amp quoted by Cioffoli had a diamond buffer with no global feedback, while QSC USA 1310 is using a virtual ground relying entirely on unregulated...electrolitic capacitors .If you ever heard a QSC USA amp you know what BASE means... I doubt a guitar player will ever care about damping factors when miking a cabinet at 80 hz...Unlike you maybe i had a Kenwood ka-1000 and huge damping factors arent really what people believe they are as you always need to factor in a relay in series with the output in 99.99% of the amplifiers...Unlike your usual Crown pro stage amplifier QSC has some capacitors and at least 0.05 ohm emiter resistor in series with their woofers ....never heard of audio amps based on silicium transistors with no emiter resistors either...I assembled several Ge output power buffers along the Ciuffolli Follower lines.
I can state, that Ge power transistors allow to achieve output impedance of amplifier in the range of 0,01...0,015 Ohms without any Negative Feedback Loop !
This is absolutely not possible with Si power transistors, usually one achieves around 0,1 Ohms in the emitter follower configuration. Si transistor has theoretical limit 0,025 Ohms, but essential base region resistors is added to this value.
Main difference between Ge and Si is in valuee of intrinsic base region resistance. This parameter is well determined and explained. Ge is better conducting, therefore intrinsic resistance of the base region of Ge transistors is much lower than of Si.
Compared sound of original Ciuffolli Follower and Ge follower, the last gives better articulated bass and more "open" sound.
The theoretical emitter impedance of a transistor is 25mV (or strictly kT/q)divided by the emitter current. That should apply to Ge and Si devices. Therefore it would need a "theoretical" 1A to obtain 25milliohm output impedance.
Therefore I agree in practice that 25 milliohms is not likely to be obtained with a Si device, but can Vladimir show the circuit for a Ge output stage with 15milliohms output impedance without NFB? Was this using a high current device - which may reach theoretical values better than silicon?