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March 14, 2014 - United Silicon Carbide Inc. releases Best In Class 1200V SiC JFET Transistor
United Silicon Carbide Inc. (USCi), releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages. The breakthrough United Silicon Carbide xJ series of 1200V JFET's are the industry's lowest RDS(on) SiC transistor device. This market milestone for silicon carbide enables best in class converter and inverter system efficiency through incorporating the lowest figure of merit ( FOM) switch commercially available. The depletion mode xJ JFET series takes advantage of silicon carbide's significantly superior performance over silicon, offering the user the best wide bandgap switch at standard 175°C Tj max. When appropriately packaged, the xJ series is capable of operating at temperatures of 250°C and beyond.
Designed to achieve best in class system efficiency, improved thermal characteristics and industry leading FOM – the xJ series enable the most efficient switching solutions for both power discrete and power module applications.
United Silicon Carbide - USCi News
and also: CoolSiC? 1200V SiC JFET & Direct Drive Technology - Infineon Technologies
United Silicon Carbide Inc. (USCi), releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages. The breakthrough United Silicon Carbide xJ series of 1200V JFET's are the industry's lowest RDS(on) SiC transistor device. This market milestone for silicon carbide enables best in class converter and inverter system efficiency through incorporating the lowest figure of merit ( FOM) switch commercially available. The depletion mode xJ JFET series takes advantage of silicon carbide's significantly superior performance over silicon, offering the user the best wide bandgap switch at standard 175°C Tj max. When appropriately packaged, the xJ series is capable of operating at temperatures of 250°C and beyond.
Designed to achieve best in class system efficiency, improved thermal characteristics and industry leading FOM – the xJ series enable the most efficient switching solutions for both power discrete and power module applications.
United Silicon Carbide - USCi News
and also: CoolSiC? 1200V SiC JFET & Direct Drive Technology - Infineon Technologies
Although designed for switching applications, they seem closer to SIT that other SIC devices recently introduced.
The output characteristics shown in the document are for high currents and it is noted clearly that they are pentode-like curves, but may be that for much lower current levels (around 2-3 A) they may have a shape similar to that of the triodes.
Hope that should be checked as soon as possible.
The most promising for our purposes seems to be the smallest.
Let's see if we can organize a small group of purchase. 🙂
The output characteristics shown in the document are for high currents and it is noted clearly that they are pentode-like curves, but may be that for much lower current levels (around 2-3 A) they may have a shape similar to that of the triodes.
Hope that should be checked as soon as possible.
The most promising for our purposes seems to be the smallest.
Let's see if we can organize a small group of purchase. 🙂
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Please note that the smaller device is the UJN1208K, but with
21 amperes of continuous drain current with only 500 pF of input cap.
Also better transfer characteristics and more promising output curves vs. Infineon, Genesic and others.
Francesco
21 amperes of continuous drain current with only 500 pF of input cap.
Also better transfer characteristics and more promising output curves vs. Infineon, Genesic and others.
Francesco
Take my name for the GB. Please
Buon giorno.
Please take in mind my name for future GB or sucedaneous
Although designed for switching applications, they seem closer to SIT that other SIC devices recently introduced.
The output characteristics shown in the document are for high currents and it is noted clearly that they are pentode-like curves, but may be that for much lower current levels (around 2-3 A) they may have a shape similar to that of the triodes.
Hope that should be checked as soon as possible.
The most promising for our purposes seems to be the smallest.
Let's see if we can organize a small group of purchase. 🙂
Buon giorno.
Please take in mind my name for future GB or sucedaneous
Member
Joined 2009
Paid Member
I'm interested in the lower current version - I'd like to know a bit more about them at higher voltages and at lower currents since the data sheets don't say much.
What is price of this SIC devices in $?
greetings
🙂
Hi Dady
What about price of SIC's transistors ?
Yes i am to see what future bring ?
Best regards
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Hi DIYspaceW
This picture is for inspire diyers build a modern class A amp with silicon carbide
transistors in STEAMPUNK style 😉
Have a nice day 😀
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Nice dream! We must say in the old days they had great eye for aesthetics.
Wooden cases also make the sound inside more magical too.
Wooden cases also make the sound inside more magical too.
Hi Dady !
Some times is afordable priced old wood staff and we can give them second life like amp box.
In big metal ball on down side we can put 1000 VA toroid and wires windings inside the pipe 😀
Old elegant aestetic & modern SIC class A sound !
Just dream today but maybe tommorow i do.
Your SIC supply and cost please ?
Some times is afordable priced old wood staff and we can give them second life like amp box.
In big metal ball on down side we can put 1000 VA toroid and wires windings inside the pipe 😀
Old elegant aestetic & modern SIC class A sound !
Just dream today but maybe tommorow i do.
Your SIC supply and cost please ?
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