March 14, 2014 - United Silicon Carbide Inc. releases Best In Class 1200V SiC JFET Transistor
United Silicon Carbide Inc. (USCi), releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages. The breakthrough United Silicon Carbide xJ series of 1200V JFET's are the industry's lowest RDS(on) SiC transistor device. This market milestone for silicon carbide enables best in class converter and inverter system efficiency through incorporating the lowest figure of merit ( FOM) switch commercially available. The depletion mode xJ JFET series takes advantage of silicon carbide's significantly superior performance over silicon, offering the user the best wide bandgap switch at standard 175°C Tj max. When appropriately packaged, the xJ series is capable of operating at temperatures of 250°C and beyond.
Designed to achieve best in class system efficiency, improved thermal characteristics and industry leading FOM – the xJ series enable the most efficient switching solutions for both power discrete and power module applications.
United Silicon Carbide - USCi News
and also: CoolSiC? 1200V SiC JFET & Direct Drive Technology - Infineon Technologies
United Silicon Carbide Inc. (USCi), releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages. The breakthrough United Silicon Carbide xJ series of 1200V JFET's are the industry's lowest RDS(on) SiC transistor device. This market milestone for silicon carbide enables best in class converter and inverter system efficiency through incorporating the lowest figure of merit ( FOM) switch commercially available. The depletion mode xJ JFET series takes advantage of silicon carbide's significantly superior performance over silicon, offering the user the best wide bandgap switch at standard 175°C Tj max. When appropriately packaged, the xJ series is capable of operating at temperatures of 250°C and beyond.
Designed to achieve best in class system efficiency, improved thermal characteristics and industry leading FOM – the xJ series enable the most efficient switching solutions for both power discrete and power module applications.
United Silicon Carbide - USCi News
and also: CoolSiC? 1200V SiC JFET & Direct Drive Technology - Infineon Technologies