With bootstrapping, the actual collector voltage of the VAS never gets more than one diode drop above the supply with bipolar outputs. The collector-base diode of the driver clamps it. With mosfet you only go above by the 12 or 15 volts that you allow with your gate-source zener (and you will use one after your first blown set).
100 or even 160 volt transistors, even fast complementary pairs, are common as dirt these days. The only reason to cling to 80 volt parts (ie, BD139) is the lack of quasi-saturation. It is a valid reason, and much harder to find that characteristic in higher voltage parts.
100 or even 160 volt transistors, even fast complementary pairs, are common as dirt these days. The only reason to cling to 80 volt parts (ie, BD139) is the lack of quasi-saturation. It is a valid reason, and much harder to find that characteristic in higher voltage parts.
Is it to generate 2nd order harmonic?
Quasi-saturation means more distortion, does it?
Just to make the assumptions explicit: I think you are assuming a complementary double emitter follower or a complementary source follower output stage.
Quasi saturation is the loss of hFE (gain) at low vce. The lower the supply voltage the bigger a deal it is. With high power amps, you never swing really close to the rails anyway. When you’re only running +/-18 volt rails keeping high gain down to 2 volts is useful. When you’re dropping 5 or 6 volts in your output stage (and half of that in an emitter resistor) hFE below 5 volts in the VAS is meaningless.