Hi Guys,
Is this new Toshiba MOSFET looks like triode curves ?.
https://www.mouser.in/datasheet/2/408/TK040N65Z_datasheet_en_20180718-1386973.pdf
Is this new Toshiba MOSFET looks like triode curves ?.
https://www.mouser.in/datasheet/2/408/TK040N65Z_datasheet_en_20180718-1386973.pdf
SCT3030ALGC11 ROHM Semiconductor | Mouser
https://www.mouser.com/datasheet/2/348/sct3030al-e-1003135.pdf
Candidate to schade feedback ?
https://www.mouser.com/datasheet/2/348/sct3030al-e-1003135.pdf
Candidate to schade feedback ?
Not really. You want to have a Id decreasing with Vds decreasing for a fix Vgs. And each of these should be different for a different Vgs. So it should look like Vgs controlling a variable resistor.
FIRST WATT
Oon
Producer of GaN SIT´s tomorrow ?
Transphorm GaN Power FET Portfolio - Transphorm
https://www.transphormusa.com/en/document/datasheet-tp65h050ws-650v-gan-fet/
Transphorm GaN Power FET Portfolio - Transphorm
https://www.transphormusa.com/en/document/datasheet-tp65h050ws-650v-gan-fet/
Attachments
The SITs would be welcome. In the meantime, you will want to be careful
playing with the existing parts with the cascode structure - they do not
show a DC SOA curve, and the samples I played with croaked at low
DC wattages.
playing with the existing parts with the cascode structure - they do not
show a DC SOA curve, and the samples I played with croaked at low
DC wattages.
I noticed that the Toshiba part linked to post 22 above is rated at 360W out to about 60V but at 300V the DC max is 0.100A. That's only 30W ??? Kinda like second breakdown. Do these parts develop hot spots at high Voltage?
Yes, a lot of them do. Electrothermal instability seems to be pretty similar
to second breakdown - it is the result of a positive temperature coefficient
(current goes up with temperature) and large die surfaces which don't
have adequate matching across the surface. Also includes the possibility
of voids between the die and the metal surface beneath it and edge effects.
At high currents, the temperature coefficient goes negative, so it's not
a particular problem at very low voltage/high current.
Ixsys has a white paper on it buried somewhere on their site, and I recall
On Semi had an earlier paper on the subject.
The issues with the internally cascoded structure parts may be something
else, and I haven't seen anything on that.
At this point I am simply very cautious when I don't see the DC curve for
safe operating area.
to second breakdown - it is the result of a positive temperature coefficient
(current goes up with temperature) and large die surfaces which don't
have adequate matching across the surface. Also includes the possibility
of voids between the die and the metal surface beneath it and edge effects.
At high currents, the temperature coefficient goes negative, so it's not
a particular problem at very low voltage/high current.
Ixsys has a white paper on it buried somewhere on their site, and I recall
On Semi had an earlier paper on the subject.
The issues with the internally cascoded structure parts may be something
else, and I haven't seen anything on that.
At this point I am simply very cautious when I don't see the DC curve for
safe operating area.
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