Transistor modeling - how do I generate P-Spice Parameter ?

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I need articles and books, where I can find more informations about this in general.
Particularly by old devices (e. g. germanium transistors like AD148, AD161/162 or AC128) but unfortunately even by some currently types (MJE340/350 or 2N/2SC/2SA series) unfortunately there are either nothing or unreliable values only available.

Thank you very much for your suggestions
 
This is the best I can manage for now:

The BJT default in ISSPICE4 gives first order, Ebers-Moll, DC
parameters; but it does not provide parameters for Transient or
AC analysis. The following default can be used when minimal
data sheet specifications are available by using the PARAM
program to evaluate the equations in curly braces. This model
will create a good transistor model from virtually any data sheet.
The parameters you must specify are:

IMAX Maximum collector current
COB Collector-base capacitance
FT Gain bandwidth product in Hz
TS Storage time

The equation-based model is shown below:
.MODEL NBJT NPN (CJC={2.2*COB} TF={.16/FT} TR={1.7*TS}
+CJE={7*COB} RC={.5/IMAX} VAF=100 IKF={.7*IMAX}
+ IS={2E-15*MAX} )

This subcircuit-based macro model makes use of the default
model parameters so that it is not permissible to change default
values without reevaluating the parameters which are given
here.

And if you want it more precise:

Improved SPICE Models for MJL3281A and MJL1302A - Section 3

- keantoken
 
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