> Definitely more difficult than Die Bond and Bumps
Piece of cake compared to wafer scanners.
Patrick
Piece of cake compared to wafer scanners.
Patrick
The recent EDN electronics industry magazine had section on this,
they also showed packaged parts from International Rectifier.
Link to another article is here:
GaN-based power devices offer game-changing potential in power-conversion electronics
they also showed packaged parts from International Rectifier.
Link to another article is here:
GaN-based power devices offer game-changing potential in power-conversion electronics
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> Definitely more difficult than Die Bond and Bumps
Piece of cake compared to wafer scanners.
Patrick
Do you / did you work with wafer inspection equipment or are you talking about lithography (ASML ?)
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I used to put together stepper machines (ASML, SVG mostly). Those are cool.
These are interesting machines, verrrrry expensive !
Exactly, all switching integrated power stage modules. Controler/Driver and high and low side FETs in 1 little PQFN. We need a discrete TO264 or TO247 like package to make things easy for us.The recent EDN electronics industry magazine had section on this, they also showed packaged parts from International Rectifier...
...power-conversion electronics[/url]
Personally, I,m like'n the SiC Stuff but I'm will'n to help advance the cause. I have to avoid any conflict of interest issues. But, that should'nt be difficult.
40mA gate current ?
No, thanks.
There are better devices from Nitronex, packaged.
But the gate leakage is still too high for me.
I know you can get round it.
Doesn't make me happy with it.
Meanwhile, packaging the epc devices is actually not difficult.
I have a solution in mind.
But high gate current is no go for me. So wait another 5 years.
There are enough research papers on the topic.
Patrick
No, thanks.
There are better devices from Nitronex, packaged.
But the gate leakage is still too high for me.
I know you can get round it.
Doesn't make me happy with it.
Meanwhile, packaging the epc devices is actually not difficult.
I have a solution in mind.
But high gate current is no go for me. So wait another 5 years.
There are enough research papers on the topic.
Patrick
Ya, but not GaN.
2.5S at 2A is not bad, but not exceptional.
And no Ciss / Crss values, though must be low for Rf.
And probably expensive.
I shall wait 5 years. 😉
Patrick
2.5S at 2A is not bad, but not exceptional.
And no Ciss / Crss values, though must be low for Rf.
And probably expensive.
I shall wait 5 years. 😉
Patrick
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