Spice models
- Thread starter JoeBob
- Start date
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Hi Harry
Have you read the "disclaimer" from any vendor...
I think it says it all.
By the way i am going to build an preamp/amp next month i think .. When i have the money for PCB's.
You are right about testing after modeling. There could be a lot of things wrong with you sim... Temperature, perfect supply rails etc.... Still you can see how far of track you are! not by nanometers but millimeters.
Sonny
Have you read the "disclaimer" from any vendor...
I think it says it all.
By the way i am going to build an preamp/amp next month i think .. When i have the money for PCB's.
You are right about testing after modeling. There could be a lot of things wrong with you sim... Temperature, perfect supply rails etc.... Still you can see how far of track you are! not by nanometers but millimeters.
Sonny
PCBs
Sonny,
I can provide two links for companies that will make double sided PCBs at 50€ per 160x100 mm² card (if you can wait three working weeks). Turns out I usually am not patient enough and make them at home...
One is www.pcb-pool.de.
I'd have to search for the other one, nice thing being it will contain stop lacquer.
Eric
Sonny,
I can provide two links for companies that will make double sided PCBs at 50€ per 160x100 mm² card (if you can wait three working weeks). Turns out I usually am not patient enough and make them at home...
One is www.pcb-pool.de.
I'd have to search for the other one, nice thing being it will contain stop lacquer.
Eric
Hi Eric
I can see this is the same price as the one i got from ELPRINT in denmark. 4 boards (100x160mm) ~ 1800 - 2500 dkr. depending on number of tools,density thickness of tracks.
I use them already at my work.
The board are going to be fullsize like A4 paper.
But thanks for the link.
Sonny
I can see this is the same price as the one i got from ELPRINT in denmark. 4 boards (100x160mm) ~ 1800 - 2500 dkr. depending on number of tools,density thickness of tracks.
I use them already at my work.
The board are going to be fullsize like A4 paper.
But thanks for the link.
Sonny
Spice
*ZETEX ZTX450 Spice model Last revision 4/90
*
.MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8
+ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13
+NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12
+TR =85E-9 VJC=.505 MJC=.39
*
*ZETEX ZTX550 Spice model Last revision 24/7/01
*
.MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
http://www.zetex.com/3.0/spice/zmodels.lib
10 minutes, started on www.altavista.com search for Zetex. Seach for spice on zetex site got menu with Applications and then menu with Spice models. Where did you look?
H.H.
*ZETEX ZTX450 Spice model Last revision 4/90
*
.MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8
+ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13
+NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12
+TR =85E-9 VJC=.505 MJC=.39
*
*ZETEX ZTX550 Spice model Last revision 24/7/01
*
.MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
http://www.zetex.com/3.0/spice/zmodels.lib
10 minutes, started on www.altavista.com search for Zetex. Seach for spice on zetex site got menu with Applications and then menu with Spice models. Where did you look?
H.H.
Hitachc Mosfet spice
*SRC=2SK1058;MSK1058;MOSFETs N;Power >100V;160V 7A
*SYM=POWMOSN
.SUBCKT MSK1058 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm N-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 80.4M
RS 30 3 5.28M
RG 20 2 21.4
CGS 2 3 410P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 100 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS NMOS (LEVEL=3 THETA=85M VMAX=163K ETA=2.2M VTO=.2 KP=.999)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=802P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SJ162;MSJ162;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT MSJ162 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 110.4M
RS 30 3 25.28M
RG 20 2 17.4
CGS 2 3 760P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 467P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 100 3 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS PMOS (LEVEL=3 THETA=90M VMAX=183K ETA=6.5M VTO=-.2 KP=1.109)
.MODEL DCGD D (CJO=467P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=900P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SJ50;MSJ50;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT MSJ50 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 80.4M
RS 30 3 5.28M
RG 20 2 15.4
CGS 2 3 860P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 513P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=533K ETA=5.5M VTO=-.34 KP=.599)
.MODEL DCGD D (CJO=513P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.12N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SK135;MSK135;MOSFETs N;Power >100V;160V 7A
*SYM=POWMOSN
.SUBCKT MSK135 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm N-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 80.4M
RS 30 3 5.28M
RG 20 2 21.4
CGS 2 3 590P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 100 DSUB
LS 30 40 12.5N
LD 10 100 5N
.MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=233K ETA=2M VTO=.25 KP=.817)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.46N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SK1058;MSK1058;MOSFETs N;Power >100V;160V 7A
*SYM=POWMOSN
.SUBCKT MSK1058 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm N-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 80.4M
RS 30 3 5.28M
RG 20 2 21.4
CGS 2 3 410P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 100 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS NMOS (LEVEL=3 THETA=85M VMAX=163K ETA=2.2M VTO=.2 KP=.999)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=802P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SJ162;MSJ162;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT MSJ162 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 110.4M
RS 30 3 25.28M
RG 20 2 17.4
CGS 2 3 760P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 467P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 100 3 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS PMOS (LEVEL=3 THETA=90M VMAX=183K ETA=6.5M VTO=-.2 KP=1.109)
.MODEL DCGD D (CJO=467P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=900P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SJ50;MSJ50;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT MSJ50 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 80.4M
RS 30 3 5.28M
RG 20 2 15.4
CGS 2 3 860P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 513P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=533K ETA=5.5M VTO=-.34 KP=.599)
.MODEL DCGD D (CJO=513P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.12N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SK135;MSK135;MOSFETs N;Power >100V;160V 7A
*SYM=POWMOSN
.SUBCKT MSK135 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm N-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 80.4M
RS 30 3 5.28M
RG 20 2 21.4
CGS 2 3 590P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 100 DSUB
LS 30 40 12.5N
LD 10 100 5N
.MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=233K ETA=2M VTO=.25 KP=.817)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.46N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
JoeBob,
I am in the same situation. I had my wife call Toshiba in Japan (she is Japanese) and ask for thier SPICE models. They would supply them to me, ONLY if I promised not to share them. I wouldn't and they didn't.
I have to belive that The Japanese use SPICE and they must have models for thier own devices, but I couldn't get my hands on any of them.
To any Japanese people out there reading this forum: HELP!
One possible solution: IF you can find a cross reference of Japanese to American (western) standard part numbers. EG: a 2SC2240 = a 2Nxxxx. (or MJxxxx, TIPxx, etc) Then use the western model for your simulation. Any reliable cross reference should be close enough to use for a SPICE simulation.
You can get the Specs (in .pdf files form) for all the Japanese part numbers off the Toshiba web site.
Another possible solution: SPICE, Practical Device Modeling by Ron Kielkowski. Make sure you ge a copy with the diskette. Then create your own devices models.
Good Luck and let me know if you get a solution.
Aud_Mot
I am in the same situation. I had my wife call Toshiba in Japan (she is Japanese) and ask for thier SPICE models. They would supply them to me, ONLY if I promised not to share them. I wouldn't and they didn't.
I have to belive that The Japanese use SPICE and they must have models for thier own devices, but I couldn't get my hands on any of them.
To any Japanese people out there reading this forum: HELP!
One possible solution: IF you can find a cross reference of Japanese to American (western) standard part numbers. EG: a 2SC2240 = a 2Nxxxx. (or MJxxxx, TIPxx, etc) Then use the western model for your simulation. Any reliable cross reference should be close enough to use for a SPICE simulation.
You can get the Specs (in .pdf files form) for all the Japanese part numbers off the Toshiba web site.
Another possible solution: SPICE, Practical Device Modeling by Ron Kielkowski. Make sure you ge a copy with the diskette. Then create your own devices models.
Good Luck and let me know if you get a solution.
Aud_Mot
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