SIT vs MOSFET

woofertester

Member
2011-06-25 10:31 pm
Attached are curves for a 2SJ20 SIT and 2SJ162 Lateral MOSFET.

The two curves are Vgs-Id and transconductance vs Vgs. The Vgs-Id curves have Vds stepped. From left to right, Vds = -19, -17, -15, -13, -11.

I chose these Vds values to probe transistor behavior when used as a single ended Class A amplifier with rails of + / - 15V for a potential headphone amp. The p-p Vds difference of 8V corresponds to 1W into 8 ohms.

The SIT Ids and transconductance have a dependence on Vds and dependence on Vgs where the LATFET has nearly zero Ids and transconductance dependence on Vds. The LATFET is obviously completely saturated where the SIT is never saturated.

These curves help me understand the operational difference between the SIT and MOSFET.
 

Attachments

  • 2SJ20_Family_Of_Transconductance_Curves_19V_to_11V_Vds.jpg
    2SJ20_Family_Of_Transconductance_Curves_19V_to_11V_Vds.jpg
    113.8 KB · Views: 466
  • 2SJ162_Family_of_Transconductance_curves.jpg
    2SJ162_Family_of_Transconductance_curves.jpg
    106 KB · Views: 479
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