Attached are curves for a 2SJ20 SIT and 2SJ162 Lateral MOSFET.
The two curves are Vgs-Id and transconductance vs Vgs. The Vgs-Id curves have Vds stepped. From left to right, Vds = -19, -17, -15, -13, -11.
I chose these Vds values to probe transistor behavior when used as a single ended Class A amplifier with rails of + / - 15V for a potential headphone amp. The p-p Vds difference of 8V corresponds to 1W into 8 ohms.
The SIT Ids and transconductance have a dependence on Vds and dependence on Vgs where the LATFET has nearly zero Ids and transconductance dependence on Vds. The LATFET is obviously completely saturated where the SIT is never saturated.
These curves help me understand the operational difference between the SIT and MOSFET.
The two curves are Vgs-Id and transconductance vs Vgs. The Vgs-Id curves have Vds stepped. From left to right, Vds = -19, -17, -15, -13, -11.
I chose these Vds values to probe transistor behavior when used as a single ended Class A amplifier with rails of + / - 15V for a potential headphone amp. The p-p Vds difference of 8V corresponds to 1W into 8 ohms.
The SIT Ids and transconductance have a dependence on Vds and dependence on Vgs where the LATFET has nearly zero Ids and transconductance dependence on Vds. The LATFET is obviously completely saturated where the SIT is never saturated.
These curves help me understand the operational difference between the SIT and MOSFET.
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and, when you mate them in DEF type of circuit , you're getting that funny current distribution ....... post #323 , Most Greedy Boy, of them all... or (there is no) DEFiSIT of Papa's Koans
To that end, I have ordered some small signal triodes with a view to matching them up with the SITs that I have recently acquired. The idea that pops is an inverted J2-ish topology using triode(s) in the front end and the 2SJ20 on the output.