@Workhorse
Many thanks for the explanation. So it's a case of the Anode-Kathode voltage exceeding the breakover voltage (VBO)? I was looking in the data sheet of the device, and I couldn't find a value for VBO. Where does the 22-35V value come from? And what is the significance of connecting the gates together rather than just letting them float unconnected? (Sorry for all the questions, but I've never used these things except for the most obvious applications).
Many thanks for the explanation. So it's a case of the Anode-Kathode voltage exceeding the breakover voltage (VBO)? I was looking in the data sheet of the device, and I couldn't find a value for VBO. Where does the 22-35V value come from? And what is the significance of connecting the gates together rather than just letting them float unconnected? (Sorry for all the questions, but I've never used these things except for the most obvious applications).
Not anode-cathode breakdown, its Gate-cathode reverse breakdown which plays its role due to reverse leakage current of SCR, if exceeded more than 5v or so avalanche occurs. Thats why gates are connected together.
Reverse Peak Gate Voltage (Pulse Width
1.0 sec; TA = 25°C) VRGM 5.0 V
http://www.onsemi.com/pub_link/Collateral/2N5060-D.PDF
Page 49-50 discusses very important feature of SBS which is similar to inverse parallel connection of two thyristors with gates connected to each other.
http://www.eet-china.com/ARTICLES/2003APR/PDF/2003APR30_AMD_AN.PDF?SOURCES=DOWNLOAD
1.0 sec; TA = 25°C) VRGM 5.0 V
http://www.onsemi.com/pub_link/Collateral/2N5060-D.PDF
Page 49-50 discusses very important feature of SBS which is similar to inverse parallel connection of two thyristors with gates connected to each other.
http://www.eet-china.com/ARTICLES/2003APR/PDF/2003APR30_AMD_AN.PDF?SOURCES=DOWNLOAD
@ Workhorse. Thank you for posting the Teacor thyristor App note. Very informative and interesting.