Output Mosfets on A75

Thank you Andersonix for information on F5 problem.

Nevertheless my A75 is producing noises again after working flawlessly until a week ago.
I had DVMs on the outputs all the time to monitor DC, and after 5 min warm-up it always was about -30 to +50 mV.

When the crackle on the right channel came back, the output DC read about 3,3V.

Checked output section and front-end separately, everything works as it should. Output MOSFET bias currents, VGS-voltages etc. same as last time. I keep an .xls-file on all measurements now ...

Of course i could swap semiconductors one by one, but my design is not that service-friendly, and i would like to listen to some music again before the end of the year ...
So i will start by swapping input channels (DC-coupled preamp with Salas DCB1), just to make sure that noise+DC-offset don´t come from there.
Next thing would be swapping frontend-PCBs of A75. After that i would replace either all outputs or frontend MOSFETs. 🙁

But if anybody here knows some trick or whatever to shorten this procedure, i would be very happy to know of ...

Norb
 
So ... after a year of normal operation the left channel failed (softly) again, heatsinks and transformer got quite hot, music still playing but again with crackling noise.

After last problem i double-checked everything again, but with no result. Now on the left channel one N-FET measured 1,6 - 2,8 kOhms between any terminal. The measured resistance varies, it goes up, then down, then up again ... funny.

The 50 pcs. IRF630 i ordered for the A75 were by ST Micro, but 2 different batches with slightly different TO220-packages marked CHN502 and PHL431. All N-FETs on the left channel are CHN502, of which 3 have failed so far. All N-FETs on right channel are PHL431, of which none has failed up to now. Also the problems always occured during warm seasons, so it seems the CHN502-ST-FETs were operating on some thermal limit, explaining their somewhat erratic behavior.

Going to replace all STs with IRs now. I only wonder if i should replace all output P-FETs as well, to not mix used and new devices.
I´ll be very happy for some advice or experience on this.

p.s.: anybody have a spare A75 for me in the meantime ?
 
Damn .... always thought it was OPLRF.

On TO247: Half number of devices with double power dissipation / half RthJ-C should lead to basically same chip temperature as with TO220, and maybe because i´m too lazy for complete rework i again will ignore your friendly expertise-backed suggestion.

I trust ST China for bad copying of devices from ST Philippines 😉, and if the new IR-IRF630 last another 13 years, rework design will be ready then.