models for 2SK982/2SJ48
- Thread starter Onvinyl
- Start date
I have for 2SJ50...
*SRC=2SJ50;MSJ50;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT 2SJ50 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 80.4M
RS 30 3 5.28M
RG 20 2 15.4
CGS 2 3 860P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 513P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=533K ETA=5.5M VTO=-.34 KP=.599)
.MODEL DCGD D (CJO=513P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.12N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=2SJ50;MSJ50;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT 2SJ50 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-07-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 80.4M
RS 30 3 5.28M
RG 20 2 15.4
CGS 2 3 860P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 513P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=533K ETA=5.5M VTO=-.34 KP=.599)
.MODEL DCGD D (CJO=513P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=1.12N VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
For LTSpice, you may need some additional parameters which can be added at the end. For BJTs, these are Vceo=, Icrating= and mfg=. I'm not exactly sure what the corresponding parameters for FETs are, but you can check standard.fet to get an idea - the values are merely placeholders that are used by the menu system and the rule-checker of LTSpice; they're not used by the simulation engine at all.