I found this part model. I thought that in the .SUBCKT text line the last set of numbers had to do with the leads on the device. If so why the 10 20 40 40 for a 3 lead device.
*IRFBG20 MCE 4-9-96
*1000V 1.4A 11 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBG20 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 5.22
RS 30 3 .276
RG 20 2 107
CGS 2 3 483P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 218P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.833)
.MODEL DCGD D (CJO=218P VJ=.6 M=.68)
.MODEL DSUB D (IS=5.81N N=1.5 RS=.535 BV=1K CJO=150P VJ=.8 M=.42 TT=130N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBG20
*IRFBG20 MCE 4-9-96
*1000V 1.4A 11 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBG20 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 5.22
RS 30 3 .276
RG 20 2 107
CGS 2 3 483P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 218P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.833)
.MODEL DCGD D (CJO=218P VJ=.6 M=.68)
.MODEL DSUB D (IS=5.81N N=1.5 RS=.535 BV=1K CJO=150P VJ=.8 M=.42 TT=130N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBG20