IR2110
For > 200W the mosfets will be driven with +/-65 - 70v with a different mosfet ( not IRF540Z ) and also need to connect them in parallel with gate resistors for individual devices, in this configuration we can Achieve > 500W.So i didn't use the LM Mosfet driver.
For > 200W the mosfets will be driven with +/-65 - 70v with a different mosfet ( not IRF540Z ) and also need to connect them in parallel with gate resistors for individual devices, in this configuration we can Achieve > 500W.So i didn't use the LM Mosfet driver.
Maybe I misunderstanding something, but why not just use diff out comparator like LM360 or AD8611 or cheaper alike, and no levelshifters, no inveters? Or even cheap dual comparator like LM319 with cross-connected inputs? Things gonna be easier that way methinks...
I also mean disconnecting IR2110's Vss from negative supply and tie it to the ground instead.
anant_narayan, could you pleeease share the simulation?
Am I understanding it right, the deadtime in these schemes is just difference between Ton and Toff?
anant_narayan, could you pleeease share the simulation?
Am I understanding it right, the deadtime in these schemes is just difference between Ton and Toff?
McDark said:
I think you need to update your knowledge...........You cannot connect VSS to GND incase of IR2110......
because the maximum permissible voltage difference VSS and COM terminal of IR2110 is +/-5V only.....
Not that practical level shifting they use inside the chip, I just did not thoght it could be so.- Status
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