Much more than that... probably nearer 1 to 2 nF at a guess. You would have to check the data sheets for the devices. A typical power fet such as an IRF9240 is around 1200pF
Thats a little bit different because bipolar transistors are current driven and need relatively high base currents anyway, and also a means to actively pull "charge" from the base to ensure a fast turn off. Its a different mechanism at work here... its not the same as "capacitance" as such.
Of course the B-E and more importantly B-C junctions are capacitive... but its something thats not normally referred to or quoted even in data sheets for power devices, although it is important for small signal HF devices.
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