Thanks.
Process 51 from the very old National databook says 35 min, 50 typ., and 65 max., for a gate current of 1uA.
Toshiba used to make some fairly HV parts, but like so many they are discontinued. I have reasons not to want to use DMOS.
Brad
Process 51 from the very old National databook says 35 min, 50 typ., and 65 max., for a gate current of 1uA.
Toshiba used to make some fairly HV parts, but like so many they are discontinued. I have reasons not to want to use DMOS.
Brad
Sounds like you want some high voltage capability - how high? Do you really want it in conjunction with something that has as high a cutoff voltage as this beast? Maybe you do, if you're trying to cascode something else...
I've been looking at iterated Aldridge cascodes (aka iterated bootstrapped/driven cascodes). The desire is to have the principal voltage-dependent capacitances in the devices be collecting electrode to control electrode, e.g. drain-gate. This allows the iterated structure to pump the displacement currents back into a "lower" device and render the impact of the variable capacitance almost negligible.
If there is as well a body diode, this effect is more difficult to cope with, although in the last couple of days I've been finding ways.
Having a "grounded-grid" stage in the mix is also a way. And yes, I would like to see at least a hundred volt swing as a capability.
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