Just in case anyone did not get the acronym/abbreviation:
gnfb = global negative feed back
...this is near to the limit of my ability to constructively participate.
_-_-bear
gnfb = global negative feed back
...this is near to the limit of my ability to constructively participate.
_-_-bear
So a prerequisite for this thread is BOTH Blowtorch threads?You missed a few theads leading up to this --> Actually, it is also about discrete low gnfb vs. IC or high gnfb.
For transistors the Toshiba 2SK2145 dual is still available 50 Volt, 300 mW 15 mS and noise figure under .5 dB. Bipolars like the KSC945 and KSA773 are readily available, complimentary, 300 mHZ and low noise. Dual P Fets are history though. The 2SK2145 has the disadvantage of sources tied though.
Maybe a nice tube for voltage gain. I will defer this to Wavebourn.
Maybe a nice tube for voltage gain. I will defer this to Wavebourn.
I am going to try today in the field Behringer 2x300W per channel amp, class D with SMPS. I paid $185 for it including shipment. No heatsinks (almost), just a fan.
We tried something similar 2 years ago. It was not Behringer, but similar brand, same output power, class D.
It was an open-air garden listening session, with JBL 250TI LE speakers.
http://www.uwe-neidhardt.de/assets/images/JBL_250Ti_Jubilee2.png
The class D was unable to compete with complementary-differential power amplifier, also 2x300W, 2SK170/2SJ74 input, cascoded, MOSFET VAS and 4 pairs MJL1302/3281 output. The class D sound was more harsh, less fluent, less full-bodied.
Any information on 2SK2145 device matching between the two? Did not see it in the datasheet.
Dave
Dave
The paper was in the Hewlett-Packard Journal and is reproduced in The Selected Papers of Bernard Oliver, pp. 311-317. I have that book handy for a change 🙂The one I was thinking of is well known (Bernie Oliver?), just the right drop on the emitter degeneration resistors (output devices) will do some first order distortion cancellation. I don't remember the exact numbers.
An excerpt: "However, the drop across this resistance produced by the operating current is only Io/2go = 1/2 kT/q to Io/go = kT/q or from 13 to 26 millivolts. Over the temperature ranges from 0 C to 100 C, the junction drop of a silicon transistor will change typically by 250 mV, Thus, unless the biasing diodes ... track this change within a few percent, Io will be very unstable ... At present the most practical solution to the temperature stability problem appears to be to make Rc [the emitter resistors] many times larger than 1/go, and to rely on negative feedback to reduce the resulting distortion."
Also in the collection is his great paper Thermal and Quantum Noise, from Proc. IEEE, May 1965.
What a wig he was.
Any information on 2SK2145 device matching between the two? Did not see it in the datasheet.
Dave
I don't think they ever said.
The matching of the 2SK2145 seems pretty good on spot testing. We buy them on reels of 3,000 and they are pretty consistent on the reel. Nice dual part for all but the lowest noise apps. I mostly current source them in circuits using the Y type.
If you close local loop before buffer, and add resistor from buffer's input to output, you will get a version of "current dumping" amp. Try and compare. However you can't get high gain from such an amp, but low distortions on a wide band for sure.
Speaking of transistors, why you don't consider Zetex devices? I would call them "Toshiba of modern days", in terms of innovations.
Speaking of transistors, why you don't consider Zetex devices? I would call them "Toshiba of modern days", in terms of innovations.
The paper was in the Hewlett-Packard Journal and is reproduced in The Selected Papers of Bernard Oliver, pp. 311-317. ... At present the most practical solution to the temperature stability problem appears to be to make Rc [the emitter resistors] many times larger than 1/go, and to rely on negative feedback to reduce the resulting distortion."
Bingo. See my output stage for headphone amp. The whole package doesnt drift at all. very temp stable circuit. Surprised no one commented before as to why circuit was so temp stable.
Thanks Brad, Wayne.
Are we talking adjacent die? perhaps 5% or less matching?
Nice, small package for an smt discrete opamp LTP. Beats the SO8 from LSK.
Dave
Are we talking adjacent die? perhaps 5% or less matching?
Nice, small package for an smt discrete opamp LTP. Beats the SO8 from LSK.
Dave
Yes, they mention 2% for some of the parameters. A great idea; formerly they just sliced and diced and dumped into a big hopper before packaging, I guess. Having things off the same wafer was better than nothing, but this is a lot better.Thanks Brad, Wayne.
Are we talking adjacent die? perhaps 5% or less matching?
Nice, small package for an smt discrete opamp LTP. Beats the SO8 from LSK.
Dave
Yes, ideal part.
Same package as the BF862, but with two FETs on one die.
Noise a bit high, and could do with a bit more Yfs.
But then you can't have it all ......
Patrick
Same package as the BF862, but with two FETs on one die.
Noise a bit high, and could do with a bit more Yfs.
But then you can't have it all ......
Patrick
Yes, ideal part.
Same package as the BF862, but with two FETs on one die.
Noise a bit high, and could do with a bit more Yfs.
But then you can't have it all ......
Patrick
The data sheet I downloaded has the gates tied together, limited use?
Datasheet Version 2007-11-01, tied source and not tied gates ?
Still useful for input LTP ?
http://www.semicon.toshiba.co.jp/eng/product_detail/transistor/jfet/1253485_13588.html
Patrick
Still useful for input LTP ?
http://www.semicon.toshiba.co.jp/eng/product_detail/transistor/jfet/1253485_13588.html
Patrick
Last edited:
2SK3320. Same electrical spec.
Even smaller package.
2SK3320?Junction FETs (Single/Dual)?TOSHIBA Semiconductor & Storage Products Company
Patrick
Even smaller package.
2SK3320?Junction FETs (Single/Dual)?TOSHIBA Semiconductor & Storage Products Company
Patrick
As most FETs are Drain / Source reversible, one can even use this as a Source Follower for the output stage.
For example :
Pin 1 = +Vs
Pin 2 = +Vout
Pin 3 = -Vs
Pin 4 = -Vs (via gate stopper)
Pin 5 = +Vin (via gate stopper)
Patrick
For example :
Pin 1 = +Vs
Pin 2 = +Vout
Pin 3 = -Vs
Pin 4 = -Vs (via gate stopper)
Pin 5 = +Vin (via gate stopper)
Patrick
Dumped into a big hopper??? Shirley you jest..😱formerly they just sliced and diced and dumped into a big hopper
I'da thunk either an expanded wafer, or waffle pack..
jn
good idea -
That is a good concept... useful and practical suggestion.
As most FETs are Drain / Source reversible, one can even use this as a Source Follower for the output stage.
For example :
Pin 1 = +Vs
Pin 2 = +Vout
Pin 3 = -Vs
Pin 4 = -Vs (via gate stopper)
Pin 5 = +Vin (via gate stopper)
Patrick
That is a good concept... useful and practical suggestion.
Dumped into a big hopper??? Shirley you jest..😱
I'da thunk either an expanded wafer, or waffle pack..
jn
Typically they're scribed on a sheet of heat activated sticky plastic and stretched. Now they would probably use a vacuum pencil pick and place after that.
The same die dual issue would be what is the substrate, I thought it might be the back gate so isolated duals would have to be two die. We always bought them that way.
EDIT Sorry EUVL the FET's were drawn funny, and some symbols show the arrow at the drain.
Last edited:
- Home
- Source & Line
- Analog Line Level
- Discrete Opamp Open Design