@mz543578854
The P mosfet has an input capacitance roughly 1.5 times more than the N.
So RxC value will be equal and match the N and P in circuit.
One can see this in the curves of the datasheets.
The P mosfet has an input capacitance roughly 1.5 times more than the N.
So RxC value will be equal and match the N and P in circuit.
One can see this in the curves of the datasheets.
Mmhhh. In these the values are exactly the same.
https://www.exicon.info/PDFs/ecx10n20.pdf
https://www.exicon.info/PDFs/ecx10p20.pdf
Well there's a dilemma...
🙂
The CISS graphs on those data sheets (input capacitance) show the P channel device input capacitance as almost twice the N channel which would be expected.
And from another Exicon publication:
The above is from Exicon's "Application Notes High Performance Audio Amplifiers" information/data sheet.
The most likely scenario is the 10P20 datasheet has a typo for the Input Capacitance value, possibly copied from the 10N20 datasheet.
A P channel mosfet has a larger Ciss value than a N channel mosfet.
If you check the 20N20 / 20P20 datashets you can see the P channel Ciss value is much higher than the N channel.
A P channel mosfet has a larger Ciss value than a N channel mosfet.
If you check the 20N20 / 20P20 datashets you can see the P channel Ciss value is much higher than the N channel.
Interesting the typo has been there since 2015 going by the date in the pdf properties from the datasheet on my computer.
Just found another typo, it appears the entire Dynamic Characteristics table between the N and P channel is also identical.
Just found another typo, it appears the entire Dynamic Characteristics table between the N and P channel is also identical.
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Thanks guys, got it. Did not check the graphs. I could have seen in the Spice models of the MOSFESTs as well 🤦♂️.
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