Hello,
I'm wondering if anybody can lead me to some information on how to determine component values for a class a SE amplifier from tube datasheets?
You've already got a lot of good advice as to resources. What you're asking is basically not possible.
Doing solid state design by formula works just great for a variety of reasons. First of all, most solid state devices are inherently high gain, and circuit performance is relatively independent of individual device characteristics. It just doesn't matter what transistor you choose, so long as it can process the frequencies being fed it, unless you need some special characteristic for some specialized purpose.
It makes a
huge difference if you stick a 12AU7 in a hole meant for a 12AX7 (and vice versa).
Secondly, every external terminal of a solid state device is connected to every other one internally. Therefore, you can count on any Si BJT to have a Vbe= 0.6V (nominal) (unless it's something
very specialized).
You can have formulas like:
Id= Idss(1 - Vgs/Vp)^2 (JFET: Where the "source" and "drain" are simply connections to opposite ends of the same piece of silicon).
In a vacuum tube, every element is just hanging there in an approximation to free space, all doing their own thing. So you need access to plate characteristics and draw loadlines. There's no other way to get the job done, unless it's some
very trial 'n' error, hit er miss, method that's time consuming, risks serious poofage, and probably won't come close to optimum results.