BIAS setting problem on amplifier

Can you give me a reason why you have a BD139 in this position ?
It requires a good bit of current to achieve a small hfe.


Most of the JLH/D.Self designs use a 100ma BJT ,your current through it shows just under 5ma ,something like a BC548 etc would be more appropriate and be more controllable.


If I am missing something here please elaborate ?

TO126 is pretty standard in DIY amps here because it's easier to mount to a heatsink than a TO92
 
Have you calculated the current - 5ma passing through a 100ma/200ma BJT in wattage , none of my variations on both design engineers ever got hot they are good for 500mw.



Its all about bias control not actual output bias on the output devices.
 
From what I've seen most designers shoot for between 5 - 7 mA VAS current. VBE is normally 4 PN (2EF) junctions or 6. With 6 PN junctions (3EF) there is often a second transistor added to the bias spreader connected as a diode. Nothing really varies too much. These are just my observations, I'm not a designer, just a builder.

The best bias spreader I've ever seen has been Ostripper's Slewmaster 3EF design using a Harmon Kardon bias circuit with a MJE340 on the driver heat sink and a second one on the output device heat sink. Bias didn't budge from a freezer to an oven.
 
Gents,

I have changed R47, 48, 50, 51 to 1.5Kohms. This gave me 15mA current for T31. I have now managed to set 7mV (approx. 21mAmps) across R76-R79.
It all works good. No more distortion at low level, of course.

By decreasing R47, 48, 50, 51 to 1.5Kohms I have increased the power dissipated by T23, 24, 26,27 from 100mW to 300mW. All I have to do is find replacement for these transistors as the ones used for the initial design are getting hotter now (measured about 70deg Celsius.)

Do you have any suggestions for these replacements ?

Regards,
Julian
 
Gents,

I have changed R47, 48, 50, 51 to 1.5Kohms. This gave me 15mA current for T31. I have now managed to set 7mV (approx. 21mAmps) across R76-R79.
It all works good. No more distortion at low level, of course.

By decreasing R47, 48, 50, 51 to 1.5Kohms I have increased the power dissipated by T23, 24, 26,27 from 100mW to 300mW. All I have to do is find replacement for these transistors as the ones used for the initial design are getting hotter now (measured about 70deg Celsius.)

Do you have any suggestions for these replacements ?

Regards,
Julian

No, but I think these look to biased into conduction more heavily than is needed with the values for R57 and R58.

This dragging down the base voltages for T32 and T33 with the effect that these are too close to each other for your vbe multiplier to work properly.

You could increase the values of R57 and R58 to push the base voltages for T32 and T33 back closer to those for the supply rails.

On the latter score both Self and Linsley-Hood loaded the collector of T31 with a small resistor of 16-27R to make the Vbe a better multiplier - one with more thermal sensitivity. The added resistor would be interposed between T31 collector and R65.

Self went a step further suggesting the gluing T31 to one of the power transistors where it would have intimate contact.