I read some threads but don´t find that I need. Google too has not help me..
Some time already I`ve been looking for information this famous old Hitachi 2SK135 L-FET amplifier circuits but I have only found 2SJ50/2SK135 complementary devices amp 😕
Is there ever published materials this kind (2SK135 type) of only N-channel Lateral amplifiers? I have a tons of Vertical N-channel amp circuit and even build some but I think that this Lateral FET is better and according to this, maybe its not very good idea if i simply place them in Vertical FET place... Maybe I only think but...
I think that due to their very different nature (Vertical vs. Lateral), this idea is not so simple as it seems or am very wrong? Are someone in here ever experiment this?
I have 25 Hitachi genuine 2SK135 but not only one 2SJ50 🙁 . I think that maybe i replace them SemeLAB ALF08P16V and some measured parameters seems close but virtually "bad" thing is that this ALFET that i have is TO247 case and therefore it is not very nice for eyes 😉 .
Or, however, it is possible to find some "genuine" circuits only to N-FET outputs? Maybe someone can say something?
Thanks 🙂
Some time already I`ve been looking for information this famous old Hitachi 2SK135 L-FET amplifier circuits but I have only found 2SJ50/2SK135 complementary devices amp 😕
Is there ever published materials this kind (2SK135 type) of only N-channel Lateral amplifiers? I have a tons of Vertical N-channel amp circuit and even build some but I think that this Lateral FET is better and according to this, maybe its not very good idea if i simply place them in Vertical FET place... Maybe I only think but...
I think that due to their very different nature (Vertical vs. Lateral), this idea is not so simple as it seems or am very wrong? Are someone in here ever experiment this?
I have 25 Hitachi genuine 2SK135 but not only one 2SJ50 🙁 . I think that maybe i replace them SemeLAB ALF08P16V and some measured parameters seems close but virtually "bad" thing is that this ALFET that i have is TO247 case and therefore it is not very nice for eyes 😉 .
Or, however, it is possible to find some "genuine" circuits only to N-FET outputs? Maybe someone can say something?
Thanks 🙂
Yeah.
I guess I was wrong, probably a native language difference (i was Estonian - Northern Europe)??
I say - i have a TONS of circuits of N-channel (quasi-complementary) MOS-FET amps and a lot of NPN bjt amps too but i have not found even internet this what i mean 🙁.
Yes, there is huge amount of Vertical (or the most widespread HEXFET) N-FET quasi amp but this is not same as Lateral FET. And this Lateral is very different if you compare Vertical/HEXFET vs. Lateral.
I know, i´ve seen even here that if someone search Lateral or substitute then some suggest Vertical/HEXFETs but this is wrong.
I have no doubt that if I replace, for example Quasi Nmos200 IRF640 output devices for 2SK135 then it is not work - no, this is not problem but i think that this replacement "do not open all Lateral nuances". I think that this Quasi circuit need some re-design. One example - if I replace this IR HEXFETs then i longer dont need thermal compensation semiconductors because Lateral FET is negative tempco and therefore Lateral FET control current which flow trought, automatically.
Maybe if I get better perormance I need re-design this circuit even more and this is my question - maybe someone reccomends some nuances.
I have there lot of books - D.Self, Cordell, Slone... if i read some days ago, i think maybe is good idea when i use some well proven Slone design and implement only quasi output stage? I thought I was going ask before, maybe someone has done this previous and give some directions 😕
If you read some AN then you understand that Vertical and Laterals are very different things 🙂
VDMOS LDMOS.pdf
MOSFET Physics and Operation.pdf
http://www.st.com/content/ccc/resou...df/jcr:content/translations/en.CD00004126.pdf
http://www.st.com/content/ccc/resou...df/jcr:content/translations/en.CD00004124.pdf
http://www.leadelectronics.com/product_specs/2sk133-2sk134-2sk135.pdf
https://www.renesas.com/ko-kr/doc/products/transistor/003/rej03g0906_2sk1056ds.pdf
I guess I was wrong, probably a native language difference (i was Estonian - Northern Europe)??
I say - i have a TONS of circuits of N-channel (quasi-complementary) MOS-FET amps and a lot of NPN bjt amps too but i have not found even internet this what i mean 🙁.
Yes, there is huge amount of Vertical (or the most widespread HEXFET) N-FET quasi amp but this is not same as Lateral FET. And this Lateral is very different if you compare Vertical/HEXFET vs. Lateral.
I know, i´ve seen even here that if someone search Lateral or substitute then some suggest Vertical/HEXFETs but this is wrong.
I have no doubt that if I replace, for example Quasi Nmos200 IRF640 output devices for 2SK135 then it is not work - no, this is not problem but i think that this replacement "do not open all Lateral nuances". I think that this Quasi circuit need some re-design. One example - if I replace this IR HEXFETs then i longer dont need thermal compensation semiconductors because Lateral FET is negative tempco and therefore Lateral FET control current which flow trought, automatically.
Maybe if I get better perormance I need re-design this circuit even more and this is my question - maybe someone reccomends some nuances.
I have there lot of books - D.Self, Cordell, Slone... if i read some days ago, i think maybe is good idea when i use some well proven Slone design and implement only quasi output stage? I thought I was going ask before, maybe someone has done this previous and give some directions 😕
If you read some AN then you understand that Vertical and Laterals are very different things 🙂
VDMOS LDMOS.pdf
MOSFET Physics and Operation.pdf
http://www.st.com/content/ccc/resou...df/jcr:content/translations/en.CD00004126.pdf
http://www.st.com/content/ccc/resou...df/jcr:content/translations/en.CD00004124.pdf
http://www.leadelectronics.com/product_specs/2sk133-2sk134-2sk135.pdf
https://www.renesas.com/ko-kr/doc/products/transistor/003/rej03g0906_2sk1056ds.pdf
The vertical and lateral mosfet circuits are similar.
You don't need source resistors in the lateral version.
The bias circuit is slightly different too.
Don't forget the pin orders are different for lateral and vertical mosfets.
You don't need source resistors in the lateral version.
The bias circuit is slightly different too.
Don't forget the pin orders are different for lateral and vertical mosfets.
Virtually yes, but there is some differences
For example:
fig6_21a (1).pdf
this is R.Slone OPTIMOS which based on Lateral MOSFET outputs but this:
http://web.tiscali.it/audiofanatic3/Tipo/Stato_solido/pic_finaliSS/120W_MOS_IRF9540_540.jpg
is another story - look at VT7 (BD139) which need to be locate close to output MOSFETs because of thermal compensation.
If you replace this first, Optimos circuit output devices for IRF(9)540 or IRFP(9)240 then you get destroyed semiconductors in some time because thermal runaway... Yes, this work ( i am experienced this 😀) but i get some oscillations and thermal runaway.
OK, I just measure some devices and i think that i will try to use Hitachi 2SK135 and ALFET ALF08P16V together and build another full complementary amp.
Althought it seems that old Hitachi devices probably better matchable.
I measure some parameters 2 pair and they are:
2SK135
TO-3 Metal
device 1
threshold Voltage: 382mV, Gate capacitance: 565pF, Resistance drain-sourse: 0,96ohm, diode forvard voltage: 378mV
device 2
threshold Voltage: 384mV, Gate capacitance: 550pF, Resistance drain-sourse: 1,02ohm, diode forvard voltage: 371mV
and P-type ALFET
ALF08P16V (TO-247 plastic)
device 1
threshold Voltage: 638mV, Gate capacitance: 893pF, Resistance drain-sourse: 1,08ohm, diode forvard voltage: 439mV
device 2
threshold Voltage: 626mV, Gate capacitance: 906pF, Resistance drain-sourse: 1,02ohm, diode forvard voltage: 432mV
P and N is different but because that i dont have 2SJ50 then i dont know which parameters they have but - maybe this blend-matching is not bad when i dont push they hard?
Or what i could be expect?
I've built some circlotron amps with laterals, one of them is presented here:
Simple cirklotron with Lateral MOSFETs
Firstwatt F6 type of circuit is another good way to go - you can double the outputs there (because of lower gm) or omit the signal transformer and use the active gain stage/phase splitter instead of it.
- Status
- Not open for further replies.