Motorola 2N1100 Transistors TO-36 case Germanium (also called the Doorknob case!)
In plastic bags of 2
Made in Mexico in 1975 production code 7551
i have 100 of them make me an offer! either single or the lot.
Spec's as found on DatasheetArchive
http://www.datasheetarchive.com/semiconductors/specsheet.php?specsheet=112152
Part Number = 2N1100
Description = Ge PNP Power Bipolar Junction Transistor
Manufacturer = Various
V(BR)CEO (V) = 65
V(BR)CBO (V) = 100
I(C) Abs.(A) Collector Current = 15
Absolute Max. Power Diss. (W) = 30
I(CBO) Max. (A) = 8.0m
@V(CBO) (V) (Test Condition) = 100
V(CE)sat Max.(V) = .70
@I(C) (A) (Test Condition) = 12
@I(B) (A) (Test Condition) = 2.0
h(FE) Min. Static Current Gain = 25
h(FE) Max. Current gain. = 50
@I(C) (A) (Test Condition) = 5.0
@V(CE) (V) (Test Condition) = 2.0
f(T) Min. (Hz) Transition Freq = 10k
@I(C) (A) (Test Condition) = 5.0
@V(CE) (V) (Test Condition) = 6.0
t(r) Max. (s) Rise time = 15u
t(f) Max. (s) Fall time. = 15u
Package = TO-36
In plastic bags of 2
Made in Mexico in 1975 production code 7551
i have 100 of them make me an offer! either single or the lot.
Spec's as found on DatasheetArchive
http://www.datasheetarchive.com/semiconductors/specsheet.php?specsheet=112152
Part Number = 2N1100
Description = Ge PNP Power Bipolar Junction Transistor
Manufacturer = Various
V(BR)CEO (V) = 65
V(BR)CBO (V) = 100
I(C) Abs.(A) Collector Current = 15
Absolute Max. Power Diss. (W) = 30
I(CBO) Max. (A) = 8.0m
@V(CBO) (V) (Test Condition) = 100
V(CE)sat Max.(V) = .70
@I(C) (A) (Test Condition) = 12
@I(B) (A) (Test Condition) = 2.0
h(FE) Min. Static Current Gain = 25
h(FE) Max. Current gain. = 50
@I(C) (A) (Test Condition) = 5.0
@V(CE) (V) (Test Condition) = 2.0
f(T) Min. (Hz) Transition Freq = 10k
@I(C) (A) (Test Condition) = 5.0
@V(CE) (V) (Test Condition) = 6.0
t(r) Max. (s) Rise time = 15u
t(f) Max. (s) Fall time. = 15u
Package = TO-36