HI,
I planned to parallelize 8 ... 10 nchanel mosfet for circlotron output stage.
In the first schematic i use IRFP150N, but i only need :
25W min
70V min
2A min
lower cap
higher transconductance at low current
I spotted this :
IRF610
IRF510
IRF530
IRF630
do you have anything else to offer, advice or favorites?
thanks
I planned to parallelize 8 ... 10 nchanel mosfet for circlotron output stage.
In the first schematic i use IRFP150N, but i only need :
25W min
70V min
2A min
lower cap
higher transconductance at low current
I spotted this :
IRF610
IRF510
IRF530
IRF630
do you have anything else to offer, advice or favorites?
thanks
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The low cost IRFZ44 is identical to IRFP150 except Vds max 60v . I advise you although I didn't tried out FQA28N15 . It has higher transconductance for lower Cgd 1200p & it is much cheaper .
I can't see gm in the DS for FQA28N15 - how did you calculate it at <2A?
Toshiba TK13E25D has gm = 6S @2A, its cheap enough on Taobao ($0.23), very low Cgd.
Toshiba TK13E25D has gm = 6S @2A, its cheap enough on Taobao ($0.23), very low Cgd.
The IRFP150 needs 22A to reach minimum 14S . The FQA at16A has typical 20S . Ok , min and typ values are not comparable but it gives an idea. I couldn't find the datasheet of TK13 but in general catalog.
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Yeah I saw that 'headline' figure but down at currents below 2A gm is going to be quite a lot lower. How much lower I couldn't determine from the DS. The Toshiba part I mentioned gives a graph of gm beginning at 1A, very few MOSFETs have such information.
FQA has also a log graph starting 100ma . I don't have what to measure , but it is clear it requires less than half volt to pass from 1A to 3A. If TK is 6s at 2A no doubt it is best choice.
HI and thanks 🙂
the FQA28N15 spice model found on onsemi website don't work in my LTspice, do you already try them ?
the FQA28N15 spice model found on onsemi website don't work in my LTspice, do you already try them ?
I tried on Tina , it works. you need to assign 20,10, 30 as D, G , S . At 2A it measures 7.42S.
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FQA or FQP(TO220) (Fairchild/Onsemi "Q-fet") are planer stripe fets, slightly different than hexfets in architecture. Although I find the stripe fets are very rugged but Gm is a bit more dependent on Vds for the planer stripes compared to hex. As if the Gm of either device has any resemblance to linearly. 🙄(sarc)
But I find the stripe fets to be very capable of driving reactive loads.😉
But I find the stripe fets to be very capable of driving reactive loads.😉
Code:
*VDMOS with subthreshold (c) Ian Hegglun
.model IRFP150N VDMOS (Rg=2 Vto=3.5 Kp=44
+ Rs=5m Ksubthres=0.15 Mtriode=1 Rd=20m Lambda=3m
+ Bex=-1.25 Vtotc=-4m Tksubthres1=4m Trs1=3.5m Trd1=5m
+ Cgdmax=2n Cgdmin=100p a=0.35 Cgs=2n Cjo=2n
+ m=0.4 VJ=0.75 IS=10n N=1.5 Eg=1.35 Rb=3m Trb1=4m
+ Vds=100 Ron=30m Qg=90nC mfg=VishIH1908)
*i dont know how using CCVS i have made the mease with this asc
I have 31.108592DB so 35S at 22A and 25V VDS
and 10.7 S at 2A
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I have used the irfp240 with good results.
IRFP250 if you want more power but dont mind a bit more gate capacitance.
I wouldn't get too close to max Vds as a spike on the mains could kill your mosfets.
IRFP250 if you want more power but dont mind a bit more gate capacitance.
I wouldn't get too close to max Vds as a spike on the mains could kill your mosfets.
hello, I have just discovered the STP16NF06 in noir headamp, do you know an equivalent which supports more than 60v?
thanks
thanks
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