are the lateral mosfets obsolete

If you look at the F7 manual it states a design goal as "very low thermal distortion and drift".
Lat FETs provide thermal stability to the biasing so that's a reasonable guess I think.

Thanks for your explanation. I believe that the F7 has a quiescent current of about 1A in the power stage. Then, about 25W is released on one lateral mosfet. If there is no stabilization of the quiescent current, it may change by about 15% when changing the temperature from 25 degrees to 75 degrees. Do you think it is not much?
 
BJTs hold some advantages but not others.

Laterals, for example, are nearly bulletproof and don't require a drive current, while power BJTs typically have a relatively low Hfe.

I've always thought that if they could get the price down, laterals would make fantastic series pass elements for linear power supplies.

But I've seen really great amplifiers built around BJTs, HEXFETs and laterals. It's probably easiest to get the lateral design right, and probably hardest to get the HEXFET design right, but that said I think that the best HEXFET designs are among the best power amplifiers ever built. Obviously that's a subjective statement.

A certain series of HEXFET based amplifiers powered everything from the 1994 Division Bell tour to Lambeau Field. Can anyone guess the manufacturer?