Question may be already asked but search function didn't lead me to specific answer.
I used a led based vref (3x) mosfet version and try MKT1822, 6.8uF for C102.
As it is difficult to find RM 22.5 10uF MKT, I parallel another 6.8uF to give a try.
The subjective effect sounds good
but as BiB guide said, 10uF is the max advised value (for line buffer... )
What is the specific reason not to go further this value ?
I used a led based vref (3x) mosfet version and try MKT1822, 6.8uF for C102.
As it is difficult to find RM 22.5 10uF MKT, I parallel another 6.8uF to give a try.
The subjective effect sounds good
but as BiB guide said, 10uF is the max advised value (for line buffer... )What is the specific reason not to go further this value ?
low DF and low Inductance SMD seem to be hard to find. I look at Kemet, Murata catalog, it's not that obvious. Back to classic mkt1822, self inductance is rated at 6nH with 2mm lead, adding one in // will in theory lower this value ?
Very informative thread but hoping for a little guidance please..
Building up a few regs; at the component testing / parts ordering stage. Have measured led's for voltage drop but wanted to clarify my test arrangement before damaging any of the fet...I don't have an accurate current meter in ma range. With a 10v battery source I am planning on putting 106R 1% in series with the drain and measuring the voltage across this to arrive at my IDSS current. Will this provide acceptable results?
Building up a few regs; at the component testing / parts ordering stage. Have measured led's for voltage drop but wanted to clarify my test arrangement before damaging any of the fet...I don't have an accurate current meter in ma range. With a 10v battery source I am planning on putting 106R 1% in series with the drain and measuring the voltage across this to arrive at my IDSS current. Will this provide acceptable results?