From the LTspice user group files, I note that ST seems to do both the MJE and TIP prefixes. Have not used these models myself, take them however you wish ...
*.model MJE2955 ako:NSC_5A PNP() ; case Mot 90 (s)
.MODEL MJE2955 PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1)
*$
*.model MJE2955K ako:NSC_5A PNP() ; case Mot 199 (s)
.MODEL MJE2955K PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1)
*$
*.model MJE2955T ako:NSC_5A PNP() ; case TO-220
.MODEL MJE2955T PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1)
*$
*.model MJE3055 ako:NSC_4A NPN() ; case Mot 90 (s)
.MODEL MJE3055 NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1)
*$
*.model MJE3055K ako:NSC_4A NPN() ; case Mot 199 (s)
.MODEL MJE3055K NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1)
*$
*.model MJE3055T ako:NSC_4A NPN() ; case TO-220
.MODEL MJE3055T NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1)
*.model TIP2955 ako:NSC_5A PNP() ; case TO-220 (s)
.MODEL TIP2955 PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1)
*$
*.model TIP3055 ako:NSC_4A NPN() ; case TO-220 (s)
.MODEL TIP3055 NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1)
.MODEL TIP2955 PNP(IS=4.66p BF=360 VAF=100 IKF=0.25 ISE=3.339E-11 BR=2 ISC=5E-9 RB=3 IRB=0.001 RBM=0.4 RC=0.04 CJE=5.802E-10 VJE=1.2 MJE=0.45 TF=8E-8 XTF=1 ITF=3 PTF=120 CJC=2.121E-10 MJC=0.4 TR=2.55u XTB=1 )
.MODEL TIP2955 PNP(IS=4.66p BF=360 VAF=100 IKF=0.25 ISE=3.339E-11 BR=2 ISC=5E-9 RB=3 IRB=0.001 RBM=0.4 RC=0.04 CJE=5.802E-10 VJE=1.2 MJE=0.45 TF=8E-8 XTF=1 ITF=3 PTF=120 CJC=2.121E-10 MJC=0.4 TR=2.55u XTB=1 ICrating=15A MFG=NSC)
.MODEL TIP2955 pnp(IS=9.73033e-13 BF=139.321 NF=0.705063 VAF=537.022 IKF=11.9427 ISE=8.51339e-09 NE=1.71065 BR=13.9321 NR=1.5 VAR=185.952 IKR=3.70468 ISC=1e-16 NC=1.31102 RB=20.1463 IRB=0.1 RBM=0.1 RE=0.0507364 RC=0.253682 XTB=0.1 XTI=3.67928 EG=1.05 CJE=9.53946e-08 VJE=0.426507 MJE=0.675433 TF=1e-08 XTF=1.35754 VTF=0.998574 ITF=0.999498 CJC=4.44708e-10 VJC=0.400409 MJC=0.409494 XCJC=0.803124 FC=0.71051 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1)
.MODEL TIP3055 NPN(IS=4.66p BF=360 VAF=100 IKF=0.25 ISE=3.339E-11 BR=2 ISC=5E-9 RB=3 IRB=0.001 RBM=0.4 RC=0.04 CJE=5.802E-10 VJE=1.2 MJE=0.45 TF=8E-8 XTF=1 ITF=3 PTF=120 CJC=2.121E-10 MJC=0.4 TR=2.55u XTB=1 )
.MODEL TIP3055 NPN(IS=4.66p BF=360 VAF=100 IKF=0.25 ISE=3.339E-11 BR=2 ISC=5E-9 RB=3 IRB=0.001 RBM=0.4 RC=0.04 CJE=5.802E-10 VJE=1.2 MJE=0.45 TF=8E-8 XTF=1 ITF=3 PTF=120 CJC=2.121E-10 MJC=0.4 TR=2.55u XTB=1 ICrating=15A MFG=NSC)
.MODEL TIP3055 npn(IS=9.20807e-13 BF=147.096 NF=1.04318 VAF=378.469 IKF=10 ISE=6.09693e-09 NE=2.4688 BR=14.7096 NR=1.5 VAR=149.08 IKR=3.14824 ISC=1e-16 NC=1 RB=14.1904 IRB=0.1 RBM=0.1 RE=0.036413 RC=0.182065 XTB=0.1 XTI=3.71709 EG=1.05 CJE=7.39634e-08 VJE=0.531216 MJE=0.573868 TF=1e-08 XTF=1.35738 VTF=0.997148 ITF=0.99974 CJC=4.44315e-10 VJC=0.400241 MJC=0.410047 XCJC=0.803124 FC=0.653134 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 mfg=OnSemi)
Notice the AKO:NSC_xA lines.
This means 'A Kind Of' in SPICE syntax, and means to copy a model named NSC_xA. It's likely that NSC_4A or NSC_5A are the wafer processes used to manufacture the 3055/2955. The different transistor parts are divided up into their respective package types or selected for their grades. Thus, the NSC model represents the "average" device from the process, and the models reference it and then substitute some of the parameters.
I see that those model lines are edited out though. Presumably these models were surgically removed from a larger library and consolidated into stand-alone models. It may be educating to see the original model library if it is anywhere to be found. Glancing at the parameters, those models look they could actually be good, though they should be vetted.
I seem to remember there is one current manufacturer of 3055 parts that have the baseplates thicker and they are more heavy-duty, but I can't remember.
This means 'A Kind Of' in SPICE syntax, and means to copy a model named NSC_xA. It's likely that NSC_4A or NSC_5A are the wafer processes used to manufacture the 3055/2955. The different transistor parts are divided up into their respective package types or selected for their grades. Thus, the NSC model represents the "average" device from the process, and the models reference it and then substitute some of the parameters.
I see that those model lines are edited out though. Presumably these models were surgically removed from a larger library and consolidated into stand-alone models. It may be educating to see the original model library if it is anywhere to be found. Glancing at the parameters, those models look they could actually be good, though they should be vetted.
I seem to remember there is one current manufacturer of 3055 parts that have the baseplates thicker and they are more heavy-duty, but I can't remember.
Okay, let's fill in more of the picture - from the same file ...
* Library of power bipolar transistor model parameters
* Copyright OrCAD, Inc. 1998 All Rights Reserved.
* $Revision: 1.15 $
* $Author: RPEREZ $
* $Date: 20 Apr 1998 13:30:40 $
*
*----------------------------------------------------------------------------
* OrCAD Incorporated would like to acknowledge Sandia National Laboratories
* for the contribution of their measurement-based models included in this
* library.
*----------------------------------------------------------------------------
* The parameters in this model library were derived from the data sheets for
* each part. Each part was characterize using the Parts option. Models
* marked with a "(s)" in the comments are electrically equivalent with the
* device they reference.
*** Transistor die process models (50th percentile)
*
* Some manufacturers provide complete and statistically accurate measurements
* for their transistor die, which are selected and packaged to create a
* variety of part numbers. OrCAD uses this, more complete, information to
* create accurate models. Each derived model is then checked against its own
* operating limits. However, the primary differences are:
* - breakdown voltage, which is not (now) used in simulations
* - package type, which relates to heat dissipation and the evolution of
* package technology
* - graded capability, e.g. guaranteed current gain
*$
.model NSC_36 NPN(Is=321.7f Xti=3 Eg=1.11 Vaf=100 Bf=278.8 Ise=321.7f Ne=1.254 Ikf=.4679 Nk=.7734 Xtb=1.5 Br=1 Isc=27.84n Nc=2.374 Ikr=20.67 Rc=1.873 Cjc=22.69p Mjc=.2467 Vjc=.75 Fc=.5 Cje=164.2p Mje=.3815 Vje=.75 Tr=6.223u Tf=2.066n Itf=50.26 Xtf=284.8K Vtf=2 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 36, pg 9-4
* 29 Nov 90 pwt creation
*$
.model NSC_4A NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4A, pg 9-7
* 30 Nov 90 pwt creation
*$
.model NSC_4E NPN(Is=1.129p Xti=3 Eg=1.11 Vaf=100 Bf=161 Ise=31.17p Ne=1.557 Ikf=1.948 Nk=.648 Xtb=2 Br=1 Isc=23.5p Nc=1.489 Ikr=31.34m Rc=.1682 Cjc=251.5p Mjc=.5045 Vjc=.75 Fc=.5 Cje=286.3p Mje=.4961 Vje=.75 Tr=810n Tf=23.64n Itf=10.92 Xtf=.3795 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4E, pg 9-10
* 30 Nov 90 pwt creation
*$
.model NSC_4F NPN(Is=2.447p Xti=3 Eg=1.11 Vaf=100 Bf=208.2 Ise=70.69p Ne=1.565 Ikf=.9743 Nk=.6134 Xtb=1.5 Br=12.59 Isc=11.68n Nc=1.835 Ikr=3.86 Rc=.4685 Cjc=142p Mjc=.4353 Vjc=.75 Fc=.5 Cje=188.5p Mje=.4878 Vje=.75 Tr=194.2n Tf=19.85n Itf=164.1 Xtf=5.945 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4F, pg 9-13
* 30 Nov 90 pwt creation
*$
.model NSC_5A PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5A, pg 9-30
* 30 Nov 90 pwt creation
*$
.model NSC_5E PNP(Is=632.4f Xti=3 Eg=1.11 Vaf=100 Bf=112.1 Ise=962.8f Ne=1.373 Ikf=2.187 Nk=.6196 Xtb=2.1 Br=66.4 Isc=974.4f Nc=1.207 Ikr=125.8 Rc=.2066 Cjc=508.9p Mjc=.4847 Vjc=.75 Fc=.5 Cje=379.8p Mje=.4937 Vje=.75 Tr=89.17n Tf=17.41n Itf=5.921 Xtf=1.062 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5E, pg 9-33
* 30 Nov 90 pwt creation
*$
.model NSC_5F PNP(Is=51.23f Xti=3 Eg=1.11 Vaf=100 Bf=434.1 Ise=51.23f Ne=1.22 Ikf=.3883 Nk=.5544 Xtb=2.2 Br=55.47 Isc=51.23f Nc=1.205 Ikr=10.87 Rc=.3443 Cjc=136.9p Mjc=.3155 Vjc=.75 Fc=.5 Cje=179.9p Mje=.4294 Vje=.75 Tr=20.25n Tf=13.05n Itf=6.85 Xtf=1.573 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5F, pg 9-36
* 30 Nov 90 pwt creation
*$
* Library of power bipolar transistor model parameters
* Copyright OrCAD, Inc. 1998 All Rights Reserved.
* $Revision: 1.15 $
* $Author: RPEREZ $
* $Date: 20 Apr 1998 13:30:40 $
*
*----------------------------------------------------------------------------
* OrCAD Incorporated would like to acknowledge Sandia National Laboratories
* for the contribution of their measurement-based models included in this
* library.
*----------------------------------------------------------------------------
* The parameters in this model library were derived from the data sheets for
* each part. Each part was characterize using the Parts option. Models
* marked with a "(s)" in the comments are electrically equivalent with the
* device they reference.
*** Transistor die process models (50th percentile)
*
* Some manufacturers provide complete and statistically accurate measurements
* for their transistor die, which are selected and packaged to create a
* variety of part numbers. OrCAD uses this, more complete, information to
* create accurate models. Each derived model is then checked against its own
* operating limits. However, the primary differences are:
* - breakdown voltage, which is not (now) used in simulations
* - package type, which relates to heat dissipation and the evolution of
* package technology
* - graded capability, e.g. guaranteed current gain
*$
.model NSC_36 NPN(Is=321.7f Xti=3 Eg=1.11 Vaf=100 Bf=278.8 Ise=321.7f Ne=1.254 Ikf=.4679 Nk=.7734 Xtb=1.5 Br=1 Isc=27.84n Nc=2.374 Ikr=20.67 Rc=1.873 Cjc=22.69p Mjc=.2467 Vjc=.75 Fc=.5 Cje=164.2p Mje=.3815 Vje=.75 Tr=6.223u Tf=2.066n Itf=50.26 Xtf=284.8K Vtf=2 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 36, pg 9-4
* 29 Nov 90 pwt creation
*$
.model NSC_4A NPN(Is=457.5f Xti=3 Eg=1.11 Vaf=50 Bf=156.7 Ise=1.346p Ne=1.34 Ikf=3.296 Nk=.5961 Xtb=2.2 Br=7.639 Isc=604.1f Nc=2.168 Ikr=8.131m Rc=91.29m Cjc=278.7p Mjc=.385 Vjc=.75 Fc=.5 Cje=433p Mje=.5 Vje=.75 Tr=1.412u Tf=37.34n Itf=35.68 Xtf=1.163 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4A, pg 9-7
* 30 Nov 90 pwt creation
*$
.model NSC_4E NPN(Is=1.129p Xti=3 Eg=1.11 Vaf=100 Bf=161 Ise=31.17p Ne=1.557 Ikf=1.948 Nk=.648 Xtb=2 Br=1 Isc=23.5p Nc=1.489 Ikr=31.34m Rc=.1682 Cjc=251.5p Mjc=.5045 Vjc=.75 Fc=.5 Cje=286.3p Mje=.4961 Vje=.75 Tr=810n Tf=23.64n Itf=10.92 Xtf=.3795 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4E, pg 9-10
* 30 Nov 90 pwt creation
*$
.model NSC_4F NPN(Is=2.447p Xti=3 Eg=1.11 Vaf=100 Bf=208.2 Ise=70.69p Ne=1.565 Ikf=.9743 Nk=.6134 Xtb=1.5 Br=12.59 Isc=11.68n Nc=1.835 Ikr=3.86 Rc=.4685 Cjc=142p Mjc=.4353 Vjc=.75 Fc=.5 Cje=188.5p Mje=.4878 Vje=.75 Tr=194.2n Tf=19.85n Itf=164.1 Xtf=5.945 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 4F, pg 9-13
* 30 Nov 90 pwt creation
*$
.model NSC_5A PNP(Is=66.19f Xti=3 Eg=1.11 Vaf=100 Bf=137.6 Ise=862.2f Ne=1.481 Ikf=1.642 Nk=.5695 Xtb=2 Br=5.88 Isc=273.5f Nc=1.24 Ikr=3.555 Rc=79.39m Cjc=870.4p Mjc=.6481 Vjc=.75 Fc=.5 Cje=390.1p Mje=.4343 Vje=.75 Tr=235.4n Tf=23.21n Itf=71.33 Xtf=5.982 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5A, pg 9-30
* 30 Nov 90 pwt creation
*$
.model NSC_5E PNP(Is=632.4f Xti=3 Eg=1.11 Vaf=100 Bf=112.1 Ise=962.8f Ne=1.373 Ikf=2.187 Nk=.6196 Xtb=2.1 Br=66.4 Isc=974.4f Nc=1.207 Ikr=125.8 Rc=.2066 Cjc=508.9p Mjc=.4847 Vjc=.75 Fc=.5 Cje=379.8p Mje=.4937 Vje=.75 Tr=89.17n Tf=17.41n Itf=5.921 Xtf=1.062 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5E, pg 9-33
* 30 Nov 90 pwt creation
*$
.model NSC_5F PNP(Is=51.23f Xti=3 Eg=1.11 Vaf=100 Bf=434.1 Ise=51.23f Ne=1.22 Ikf=.3883 Nk=.5544 Xtb=2.2 Br=55.47 Isc=51.23f Nc=1.205 Ikr=10.87 Rc=.3443 Cjc=136.9p Mjc=.3155 Vjc=.75 Fc=.5 Cje=179.9p Mje=.4294 Vje=.75 Tr=20.25n Tf=13.05n Itf=6.85 Xtf=1.573 Vtf=10 Rb=.1 MFG=National)
* National Semiconductor
* Transistor Databook, 1982, process 5F, pg 9-36
* 30 Nov 90 pwt creation
*$
Fascinating. Now we know that these models are (claimed to be) made from die measurements directly from the factory, and if they are fraudulent, we know who to blame (Sandia National Labratories).
EDIT: It could be that the process models were 'deprecated' because new models were created from more modern parts. I do see some differences; some of the complimentary models are even copies! Oh no!!!
On the other hand, they are copyrighted, so what are the copyright terms and has the copyright expired yet? There may be lenience for educational and/or non-commercial use even if not for other purposes.
EDIT: It could be that the process models were 'deprecated' because new models were created from more modern parts. I do see some differences; some of the complimentary models are even copies! Oh no!!!
On the other hand, they are copyrighted, so what are the copyright terms and has the copyright expired yet? There may be lenience for educational and/or non-commercial use even if not for other purposes.
Last edited:
From the head of the file:
* Copyright ┬® 2000 Linear Technology Corporation. All rights reserved.
* Includes LTspice models and additional models (sorted alpha-numericly)
* Includes all models by LTspice and all contributors
* LTspice SwitcherCAD IV Small Signal BJT Database
* also includes spice models found from various resources on thr net
* and manufacturers spice models
* It is supplied free of charge by Zetex for ; the purpose of research and design and may be used or copied intact (including this notice) for that purpose only.
* All other ; rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for ;
* purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. ;
* Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP
*
* All entries compiled from the contributor libraries on LTSpice yahoo group and other sources
* bjtn - Datasheet Archive
* pwrbjt - Datasheet Archive
* rus_q - Datasheet Archive
* phil_bjt - Datasheet Archive
* jpwrbjt - Datasheet Archive
* s_afbjt - Datasheet Archive
* phillips_bjt - Datasheet Archive
* I can't guarantee the accuracy of all included models, so use at your own discretion. And sorry for duplicates.
* Copyright ┬® 2000 Linear Technology Corporation. All rights reserved.
* Includes LTspice models and additional models (sorted alpha-numericly)
* Includes all models by LTspice and all contributors
* LTspice SwitcherCAD IV Small Signal BJT Database
* also includes spice models found from various resources on thr net
* and manufacturers spice models
* It is supplied free of charge by Zetex for ; the purpose of research and design and may be used or copied intact (including this notice) for that purpose only.
* All other ; rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for ;
* purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. ;
* Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP
*
* All entries compiled from the contributor libraries on LTSpice yahoo group and other sources
* bjtn - Datasheet Archive
* pwrbjt - Datasheet Archive
* rus_q - Datasheet Archive
* phil_bjt - Datasheet Archive
* jpwrbjt - Datasheet Archive
* s_afbjt - Datasheet Archive
* phillips_bjt - Datasheet Archive
* I can't guarantee the accuracy of all included models, so use at your own discretion. And sorry for duplicates.
There are certainly a lot of model libraries, and some of them may be accurate or contain some accurate models.
We can't simply begin vetting each model one by one. No one has the time for that, and we'd be adding a lot of models that no one would ever use.
For this reason I suggest we draw up a standardized model vetting procedure using simulation rigs so that it's easy and intuitive to test a model. Then we make it clear what it takes to check a model (if it's easy many will be willing to do it themselves), and that we will take model requests.
The response to a model request would first be to look through the model libraries for suitable models, and if none are found, if someone is willing they may create a model. There are spreadsheets and tools that may make this easier than anyone thinks.
We can't simply begin vetting each model one by one. No one has the time for that, and we'd be adding a lot of models that no one would ever use.
For this reason I suggest we draw up a standardized model vetting procedure using simulation rigs so that it's easy and intuitive to test a model. Then we make it clear what it takes to check a model (if it's easy many will be willing to do it themselves), and that we will take model requests.
The response to a model request would first be to look through the model libraries for suitable models, and if none are found, if someone is willing they may create a model. There are spreadsheets and tools that may make this easier than anyone thinks.
Well, I was adjusting some quasi-saturation models for the BC3x7-40 and found a bug in the simulator model code! Sent it to Mike and he fixed it almost instantly. It's funny, there's programmers and then there's super-programmers like Mike. I'm really curious what makes the difference.
At any rate, the fixed quasi-sat update for LTSpice should be available tomorrow or the day after according to him. Changelog.txt in the LTSpice directory should indicate the fix after it's added.
This problem probably doesn't affect anyone here, because there are almost no general-purpose models that use the quasisat parameters anyway. My BC3x7-40 models will eventually.
At any rate, the fixed quasi-sat update for LTSpice should be available tomorrow or the day after according to him. Changelog.txt in the LTSpice directory should indicate the fix after it's added.
This problem probably doesn't affect anyone here, because there are almost no general-purpose models that use the quasisat parameters anyway. My BC3x7-40 models will eventually.
You may be right, and we're all going for the easy way and fall into complacency.
However you have to consider that so many more people are getting into things they would never have gotten into before, so there is a greatly increasing number of people using that stuff, and most without all the knowledge. So it's good that in such a community, some are taking on the role of mentors for the others aspiring to learn. Some of us are very eager to learn much more, and the sharing helps a lot.
Rome wasn't built in one day and many have the opportunity to make progress in their knowledge, and some day make contributions in finding bugs like this.
I applied the update earlier today, and as I thought, one thing that happens, even if no update is requested for the models, is that whatever changes we've made to the standard library files are overwritten.
I wonder how we can manage to replace the standard libraries and avoid having them go away at every update.
I wonder how we can manage to replace the standard libraries and avoid having them go away at every update.
I cleaned up NXP's BF862 model -- doesn't quite fit the frame width, thus the extra "+"
* BF862 SPICE MODEL MARCH 2007 NXP SEMICONDUCTORS
* ENVELOPE SOT23
* Adapted for generic spice programs 3-4-2014
.subckt BF862 1 2 3
Ld 1 4 1.1nH
Ls 3 6 1.25nH
Lg 2 5 0.78nH
Rg 5 7 0.535 Ohm
Cds 1 3 0.0001pF
Cgs 2 3 1.05pF
Cgd 1 2 0.201pF
Co 4 6 0.35092pF
J1 4 7 6 JBF862
*JBF862 model parameters:
.model JBF862 NJF(Beta=47.800E-3 Betatce=-.5 Rd=.8 Rs=7.5000 Lambda=37.300E-3
+ Vto=-.57093
+ Vtotc=-2.0000E-3 Is=424.60E-12 Isr=2.995p N=1 Nr=2 Xti=3 Alpha=-1.0000E-3
+ Vk=59.97 Cgd=7.4002E-12 M=.6015 Pb=.5 Fc=.5 Cgs=8.2890E-12 Kf=87.5E-18
+ Af=1)
.ends
* BF862 SPICE MODEL MARCH 2007 NXP SEMICONDUCTORS
* ENVELOPE SOT23
* Adapted for generic spice programs 3-4-2014
.subckt BF862 1 2 3
Ld 1 4 1.1nH
Ls 3 6 1.25nH
Lg 2 5 0.78nH
Rg 5 7 0.535 Ohm
Cds 1 3 0.0001pF
Cgs 2 3 1.05pF
Cgd 1 2 0.201pF
Co 4 6 0.35092pF
J1 4 7 6 JBF862
*JBF862 model parameters:
.model JBF862 NJF(Beta=47.800E-3 Betatce=-.5 Rd=.8 Rs=7.5000 Lambda=37.300E-3
+ Vto=-.57093
+ Vtotc=-2.0000E-3 Is=424.60E-12 Isr=2.995p N=1 Nr=2 Xti=3 Alpha=-1.0000E-3
+ Vk=59.97 Cgd=7.4002E-12 M=.6015 Pb=.5 Fc=.5 Cgs=8.2890E-12 Kf=87.5E-18
+ Af=1)
.ends
Great! Interesting to have an external gate resistance of 0.5R. Must be an extremely thin bonding wire?
Few of us simulate inductances to within a few nH so I think the model can be taken out of the subcircuit and put in the standard.jft for convenience. People doing RF simulations will know they need to use the subcircuit model. What do you think? Maybe add a /lib/sym/parasitic directory containing symbols connected to parasitic subcircuits? There are probably generic subcircuits for each transistor package type that would be useful.
Few of us simulate inductances to within a few nH so I think the model can be taken out of the subcircuit and put in the standard.jft for convenience. People doing RF simulations will know they need to use the subcircuit model. What do you think? Maybe add a /lib/sym/parasitic directory containing symbols connected to parasitic subcircuits? There are probably generic subcircuits for each transistor package type that would be useful.
It's probably an implanted gate so the 0.535R represents the geometric mean of the resistance between the gate pin and each infinitesimally small ("dx") portion of the gate geometry. Right next to the pin the gate resistance is ~0, but at the maximally farthest point the gate resistance is >1R; 0.535R is a weighted average.
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