Almost certainly bipolar: the terms VBE and hFE are used on page 5 of its datasheet, so there must be bipolar transistors in the device. That makes sense, because of the much better matching of bipolars.
On page 2 the input current for a low digital input is specified as 50 uA maximum, while it is only 1 uA for a high level. This is typical for TTL-like bipolar inputs. If it were made in a BiCMOS rather than a bipolar process, the digital part would be made with MOSFETs and have low input currents for both high and low levels.
On page 2 the input current for a low digital input is specified as 50 uA maximum, while it is only 1 uA for a high level. This is typical for TTL-like bipolar inputs. If it were made in a BiCMOS rather than a bipolar process, the digital part would be made with MOSFETs and have low input currents for both high and low levels.
- Status
- This old topic is closed. If you want to reopen this topic, contact a moderator using the "Report Post" button.