Its long way to learn, if you coming from Class AB
The reasaon is because the Mosfets working as switches
and check P Channel datasheet and you get the answer
- you will need many years to learn and good Prof teacher with experience
for stable working design
- original semiconductor devices from reliable supplier not cheap 3th party
and so on
good luck, problems will come
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N-Channel Mosfets are majority carrier, electrons, devices. P-channel Mosfets are minority carrier, holes, devices.
Broadly speaking the mobility of holes is half that or electrons and as such for a given die area a P-channel device will have twice the intrinsic on resistance of an N-channel device. Look at the datasheets for an IRFNNN versus an IRFPNNN where the N's are the same.
The P-channel device will always have about twice the on resistance of the complementary N-channel device. If you want to achieve the same on resistance then you need a bigger die area perhaps twice as big but, as a result, the device capacitances also double/square and that impacts on the switching performance.
In a Class D amplifier and other applications involving a half bridge it is desirable to minimise dead time and as such it is good to have the switching characteristics of the power devices closely matched. With the advent of level shifted gate drivers that becomes an achievable goal.
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