no seriously,
isnt this a near perfect MOSFET?
FDPF3860T
http://www.fairchildsemi.com/pf/FD/FDPF3860T.html
isnt this a near perfect MOSFET?
FDPF3860T
http://www.fairchildsemi.com/pf/FD/FDPF3860T.html
This is a similar one 😉
http://www.irf.com/product-info/datasheets/data/irf540z.pdf
Hard to beat parameters for a 100V device. I have already made amplifiers with them, I got 150W @ 4 ohm full music output without heatsink.
http://www.irf.com/product-info/datasheets/data/irf540z.pdf
Hard to beat parameters for a 100V device. I have already made amplifiers with them, I got 150W @ 4 ohm full music output without heatsink.
This is undoubtedly bad news because as devices get better amplifier design gets less interesting.
w
w
Eva said:
I guess you mean irfs540z D2PAK, hence PCB is a heatsink, to220 150W@4Ohm(resistive) sine 50Hz maybe just 20sec ok and the end. BTW, nice 100V mosfet from Infineon, about 20nC and almost the same Rds_on.
Mosfet
IRFB4212
I got 135W RMS 4 ohm load no heat sink.
They do get hot to the touch. I also have them switching at
1.35 Mhz.
For more current, The 41 Amp FDP3672 is a real dandy.
IRFB4212
I got 135W RMS 4 ohm load no heat sink.
They do get hot to the touch. I also have them switching at
1.35 Mhz.
For more current, The 41 Amp FDP3672 is a real dandy.
IVX said:
Read my post again. I mean rail to rail continuous music output on a circuit capable of 150W @ 4 ohms.
oh sorry, I had mistake, Infineon mosfet IPB26CN10N have even lower Rds_on(19mOhm) than IRF540Z, and 1/2 of Qg(23nC), I've tried it last summer instead of IRF540Z, that's really cool, but 540z much cheaper yet, 2.5 times if I remember correctly. Also I had experience with IXTP42N15 and IXTP56N15 from IXYS, data sheets looks great, but this stuff is unexpectedly weak, I have no idea why, but irf540z and IPB26CN10N( .2mm silpad used) no problem with 2 Ohm load +/-45VDC rails, but only not IXYS.. I've checked Rds_on it's ok, it seems Rth_die_case too high, actually IXYS Trench Gate mosfets use really small die.
all other igbts are better in the UK to Fairchildsemi 
This is because there outlets are incompetent.
Just try and use them
This is because there outlets are incompetent.
Just try and use them
aandy said:all other igbts are better in the UK to Fairchildsemi
This is because there outlets are incompetent.
Just try and use them
What IGBTs do you use in your power supplies?
Eva said:
I don't know, but looks like Id(IR)=Id(Inf)=2*Id(IXYS) 😕 I haven't time to investigate this problem, I just use IR, ST, Inf or Fairchild, but now afraid IXYS. Also I've tested IXTP98N75 vs IRFB3507, IXTP76N75 vs IRF3205, IXTP56N15 vs IRFB52N15, IXTP60N10 vs IRFB59N10 - problem is the same.
Aren't they fakes? You should also check Cgs, Vdsmax!
Funny way I didn't find many of the mentioned parts on IXYS's homepage. Are you sure they are existing?
But what I found:
IXTP42N15T
"dv/dt 3 V/ns"
"trr 100 ns"
These are not really good specs. (As Eva said.)
Here's interesting one new one, although it seems unavailable for now.
http://www.fairchildsemi.com/pf/FD/FDPF680N10T.html
http://www.fairchildsemi.com/pf/FD/FDPF680N10T.html
how about this one from Texas instruments :
http://focus.ti.com/lit/ds/symlink/csd16412q5a.pdf
RDSon - 9 mOhm
Qg - 3 nC
Qrr - 12 nC
Trr - 16 nS
And one characteristic that i have never see on another mosfet, the Td off is lower that Td on 7nS and 8.9 nS, fall time is also lower than rise time.
Maybe its possible to drive this mosfets without dead time compensation.
The Vds is only 25v, but they seem perfect for a very hight efficient 50w on 4ohm BTL amplifier.
http://focus.ti.com/lit/ds/symlink/csd16412q5a.pdf
RDSon - 9 mOhm
Qg - 3 nC
Qrr - 12 nC
Trr - 16 nS
And one characteristic that i have never see on another mosfet, the Td off is lower that Td on 7nS and 8.9 nS, fall time is also lower than rise time.
Maybe its possible to drive this mosfets without dead time compensation.
The Vds is only 25v, but they seem perfect for a very hight efficient 50w on 4ohm BTL amplifier.
Do these small mosfets still require a big mosfet-driver or is it sufficient to drive them (fast) form a simpler driver (or phase-/level-shifter)?
Use the gate charge figure to calculate how much current is required to charge and discharge the gate in the desired amount of time. Then find out how much current can various driver options provide.
For example, charging 6nC (gate charge of this MOSFET at Vgs=10V) in 24ns requires .25A
For example, charging 6nC (gate charge of this MOSFET at Vgs=10V) in 24ns requires .25A
buenas noches Eva.😉
Eva, i have read some of your posts, and i think you one of the best expertise in power electronics in this forum, so i would appreciate your opinion.
Do you think that is possible to drive this mosfet without dead time compensation? (as the TDoff is lower that TDon)
I think is better to drive this at 4.5v, only 3nc (less switch lost) and a slight increase in RDSon from 9mohms to 13mhoms.
Thanks.
Eva, i have read some of your posts, and i think you one of the best expertise in power electronics in this forum, so i would appreciate your opinion.
Do you think that is possible to drive this mosfet without dead time compensation? (as the TDoff is lower that TDon)
I think is better to drive this at 4.5v, only 3nc (less switch lost) and a slight increase in RDSon from 9mohms to 13mhoms.
Thanks.
If you want to do it properly, some kind of compensations is always required, either at the gate with R plus R+D or before the driver. Discharge has to be always "faster" than charge to achieve higher turn-off di/dt and avoid overlapping. This may result in dead time that has to be corrected elsewhere.
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