Temperature simulation

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Hi all,

I was thinking of upping the bias on my A5 but I was worried about the temperature increase. So I thought why don't I simulate it in the Pass matching circuit and see how much the irfp240 can handle. Anyway I used a 33ohm power resistor and 30v. The bench ps showed about .780 A current but the mosfet was at about few degrees above ambient even while the resistor was into 80C. The connections were double checked and the Vgs of the transistor was around 4+ V.
Am I going the wrong way about it? Then what is the use of matching the transistors like this if you can't get them to operate at realistic temperatures as I see in my Aleph e.g. 80-100C.
 
In the matching circuit the gate is connected to the drain.
This means Vds is Vgs. Dissipation in the fet will be aprox.
4*0.78 = 3.12 Watt. If you use a small sink on the FET, it will not
get hot. The resistor however will dissipate aprox.
30-4=26*0.78=20.28 Watt. This means very hot resistor.

The matching circuit is appropriate to measure the Vgs at a fixed
current through the FET.

Hope this helps a little.
 
Slightly off thread, but

This is a little off the topic of temp simulation, but directly concerns the matching circuit for mosfets.

If I use the matching circuit discussed at PassDIY and on this forum, as well as elsewhere, and I get a Vgs reading on a MOSFET that appears normal (e.g. 4.25v or something) is that an indication that the device is working. Can there be any mode or portion of the device that has failed and still have this kind of measurement result?

I tried to get an answer or opinion on this in another post (on A-75 devices) but did not get one bit of feedback despite many, many, "viewings". The devices in question are IRF231 and IRF 9231 TO-3 devices, tested with the appropriate R in the setup.

Thanks 😉
 
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