Semilab Lateral MOSFET SPICE Models ALF08N20V, ALF08P20V, ALF16N20W, ALF16P20W

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Hello All,

As many on this forum, I could not find good models of Lateral Mosfets. The models from Exicon are not accurate; Profusion and Semelab don't give out Models. So using Intusoft SpiceMod5 software, the data sheets provided by Semelab, I generated models that I verified through SPICE simulation match the datasheets. I'm sorry I don't have the physical parts themselves to compare to the datasheets. The models should match the datasheets quite well for linear operation. The switching characteristics are not accurate since the data sheets give little detail as to the method used to determine the Ton and Toff values.

Use these models if you wish for DIY simulations. I do not claim any warranty that these models match the actual devices. They are provided AS IS. Please give me feedback if you like.

Cheers,

Leslie

______________________

*SRC=ALF08N20W;ALF08N20;MOSFETs N;Lateral;200V 8.00A 1.5ohms SEMELAB Lateral
*SYM=POWMOSN; 08/29/13
.SUBCKT ALF08N20 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 1.29
RS 40 3 69.0m
RG 20 2 18.7
CGS 2 3 490p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 70.5p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=417k THETA=80.0m
+ ETA=125u VTO=0.100 KP=1.18
.MODEL DCGD D (CJO=70.5p VJ=0.600 M=0.680
.MODEL DSUB D (IS=33.2n N=1.50 RS=56.3m BV=200
+ CJO=865p VJ=0.800 M=0.420 TT=100n
.MODEL DLIM D (IS=100U)
.ENDS

*SRC=ALF08P20V;ALF08P20;MOSFETs P;Lateral;-200V -8.00A 1.5ohms SEMELAB Lateral
*SYM=POWMOSP; 08/29/2013
.SUBCKT ALF08P20 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 1.20
RS 40 3 64.0m
RG 20 2 18.7
CGS 2 3 675p
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 176p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=417k THETA=80.0m
+ ETA=125u VTO=-520m KP=0.771
.MODEL DCGD D (CJO=176p VJ=0.600 M=0.680
.MODEL DSUB D (IS=33.2n N=1.50 RS=56.3m BV=200
+ CJO=820p VJ=0.800 M=0.420 TT=100n
.MODEL DLIM D (IS=100U)
.ENDS

*SRC=ALF16N20W;ALF16N20;MOSFETs N;Lateral;200V 16.0A 0.75ohms SEMELAB Lateral
*SYM=POWMOSN; 08/29/13
.SUBCKT ALF16N20 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.640
RS 40 3 34.7m
RG 20 2 9.37
CGS 2 3 884p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 113p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=417k THETA=80.0m
+ ETA=62.5u VTO=0.150 KP=2.06
.MODEL DCGD D (CJO=113p VJ=0.600 M=0.680
.MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=200
+ CJO=1.44n VJ=0.800 M=0.420 TT=100n
.MODEL DLIM D (IS=100U)
.ENDS

*SRC=ALF16P20W;ALF16P20;MOSFETs P;Lateral;-200V -16.0A 0.75ohms SEMELAB Lateral
*SYM=POWMOSP; 08/29/13
.SUBCKT ALF16P20 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.588
RS 40 3 32.0m
RG 20 2 9.37
CGS 2 3 1.79n
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 388p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=417k THETA=80.0m
+ ETA=62.5u VTO=-530m KP=1.58
.MODEL DCGD D (CJO=388p VJ=0.600 M=0.680
.MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=200
+ CJO=2.37n VJ=0.800 M=0.420 TT=100n
.MODEL DLIM D (IS=100U)
.ENDS
 
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