Hi all
I am not confident on accuracy of this model
*Feb 22, 2010
*Doc. ID: 90225, Rev. A
*File Name: part irf830_sihf830_PS.txt and part irf830_sihf830_PS.spi
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT IRF830 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on May 21, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.86308 LAMBDA=0.00289944 KP=2.00897
+CGSO=5.55536e-06 CGDO=1e-11
RS 8 3 0.0001
D1 3 1 MD
.MODEL MD D IS=3.21167e-09 RS=0.018759 N=1.44803 BV=500 +IBV=0.00025 EG=1.2 XTI=3.01692 TT=0 +CJO=5.33099e-10 VJ=3.77417 M=0.9 FC=0.5
RDS 3 1 2e+07
RD 9 1 1.27635
RG 2 7 3.87074
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50 +CJO=1.01524e-09 VJ=1.43239 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.527364 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.01524e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.527364
.ENDS
Any help is welcome, thanks in advance.
I am not confident on accuracy of this model
*Feb 22, 2010
*Doc. ID: 90225, Rev. A
*File Name: part irf830_sihf830_PS.txt and part irf830_sihf830_PS.spi
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT IRF830 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on May 21, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.86308 LAMBDA=0.00289944 KP=2.00897
+CGSO=5.55536e-06 CGDO=1e-11
RS 8 3 0.0001
D1 3 1 MD
.MODEL MD D IS=3.21167e-09 RS=0.018759 N=1.44803 BV=500 +IBV=0.00025 EG=1.2 XTI=3.01692 TT=0 +CJO=5.33099e-10 VJ=3.77417 M=0.9 FC=0.5
RDS 3 1 2e+07
RD 9 1 1.27635
RG 2 7 3.87074
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50 +CJO=1.01524e-09 VJ=1.43239 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.527364 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.01524e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.527364
.ENDS
Any help is welcome, thanks in advance.
So far I found a syntax error, after corrected
*Feb 22, 2010
*Doc. ID: 90225, Rev. A
*File Name: part irf830_sihf830_PS.txt and part irf830_sihf830_PS.spi
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT IRF830 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on May 21, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.86308 LAMBDA=0.00289944 KP=2.00897
+CGSO=5.55536e-06 CGDO=1e-11
RS 8 3 0.0001
D1 3 1 MD
.MODEL MD D IS=3.21167e-09 RS=0.018759 N=1.44803 BV=500
+IBV=0.00025 EG=1.2 XTI=3.01692 TT=0
+CJO=5.33099e-10 VJ=3.77417 M=0.9 FC=0.5
RDS 3 1 2e+07
RD 9 1 1.27635
RG 2 7 3.87074
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=1.01524e-09 VJ=1.43239 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.527364 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.01524e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.527364
.ENDS
Now the model behaves more realistic.
What about this? It does not work in LTSpice
**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FQP3P50
** 500V P-Channel MOSFET
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FQP3P50 2 1 3
*Nom Temp=25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 1.125e-9
Ldrain 2 5 5.00e-10
Lsource 3 7 9.66e-10
RLgate 1 9 11.25
RLdrain 2 5 5.00
RLsource 3 7 9.66
Rgate 9 6 0.5
It 7 17 1
Ebreak 5 11 17 7 -500
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=8.2e-4 TC2=-1.05e-6)
.MODEL DbodyMOD D (IS=1.08e-15 N=1.0 RS=0.152 TRS1=1.0e-6 TRS2=1.1e-7
+ CJO=6.52e-10 M=0.42 VJ=0.65 TT=4.39e-7 XTI=3 EG=1.24)
.MODEL DbreakMOD D (RS=0.1 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 3.9
.MODEL RdrainMOD RES (TC1=7.31e-3 TC2=1.14e-5)
M_BSIM3 16 6 7 7 BSIM3 W=0.86 L=2.0e-6 NRS=1
.MODEL BSIM3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 (Line moved by forum's editor)
+ TOX=970e-10 XJ=1.0e-6 NCH=1.1e17
+ U0=250 VSAT=5.0e5 DROUT=1.0
+ DELTA=0.1 PSCBE2=0 RSH=1.5e-3
+ VTH0=-3.55 VOFF=-0.1 NFACTOR=1.1
+ LINT=2.7e-8 DLC=2.7e-8 CGSO=1.1e-15
+ CGSL=0 CGDO=6.5e-15 CGDL=7.82e-10
+ CJ=0 CF=0 CKAPPA=0.2
+ KT1=-1.08 KT2=0 UA1=-7.2e-9
+ NJ=10 FC=0.5)
.ENDS
******************* Power Discrete MOSFET Thermal Model ************************
** Product: FQP3P50
** Package: TO-220
**------------------------------------------------------------------------------
.SUBCKT FQP3P50_THERMAL TH TL
CTHERM1 TH 6 8.04e-4
CTHERM2 6 5 4.28e-3
CTHERM3 5 4 8.34e-3
CTHERM4 4 3 1.62e-2
CTHERM5 3 2 2.02e-1
CTHERM6 2 TL 5.42e-1
RTHERM1 TH 6 1.30e-2
RTHERM2 6 5 2.88e-2
RTHERM3 5 4 3.68e-2
RTHERM4 4 3 4.12e-1
RTHERM5 3 2 4.41e-1
RTHERM6 2 TL 5.38e-1
.ENDS FQP3P50_THERMAL
**-----------------------------------------------------------------------------
** Creation: Mar.-16-2012 Rev.:0.0
** Fairchild Semiconductor
*Feb 22, 2010
*Doc. ID: 90225, Rev. A
*File Name: part irf830_sihf830_PS.txt and part irf830_sihf830_PS.spi
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT IRF830 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on May 21, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.86308 LAMBDA=0.00289944 KP=2.00897
+CGSO=5.55536e-06 CGDO=1e-11
RS 8 3 0.0001
D1 3 1 MD
.MODEL MD D IS=3.21167e-09 RS=0.018759 N=1.44803 BV=500
+IBV=0.00025 EG=1.2 XTI=3.01692 TT=0
+CJO=5.33099e-10 VJ=3.77417 M=0.9 FC=0.5
RDS 3 1 2e+07
RD 9 1 1.27635
RG 2 7 3.87074
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=1.01524e-09 VJ=1.43239 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.527364 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.01524e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.527364
.ENDS
Now the model behaves more realistic.
What about this? It does not work in LTSpice
**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FQP3P50
** 500V P-Channel MOSFET
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FQP3P50 2 1 3
*Nom Temp=25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 1.125e-9
Ldrain 2 5 5.00e-10
Lsource 3 7 9.66e-10
RLgate 1 9 11.25
RLdrain 2 5 5.00
RLsource 3 7 9.66
Rgate 9 6 0.5
It 7 17 1
Ebreak 5 11 17 7 -500
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=8.2e-4 TC2=-1.05e-6)
.MODEL DbodyMOD D (IS=1.08e-15 N=1.0 RS=0.152 TRS1=1.0e-6 TRS2=1.1e-7
+ CJO=6.52e-10 M=0.42 VJ=0.65 TT=4.39e-7 XTI=3 EG=1.24)
.MODEL DbreakMOD D (RS=0.1 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 3.9
.MODEL RdrainMOD RES (TC1=7.31e-3 TC2=1.14e-5)
M_BSIM3 16 6 7 7 BSIM3 W=0.86 L=2.0e-6 NRS=1
.MODEL BSIM3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 (Line moved by forum's editor)
+ TOX=970e-10 XJ=1.0e-6 NCH=1.1e17
+ U0=250 VSAT=5.0e5 DROUT=1.0
+ DELTA=0.1 PSCBE2=0 RSH=1.5e-3
+ VTH0=-3.55 VOFF=-0.1 NFACTOR=1.1
+ LINT=2.7e-8 DLC=2.7e-8 CGSO=1.1e-15
+ CGSL=0 CGDO=6.5e-15 CGDL=7.82e-10
+ CJ=0 CF=0 CKAPPA=0.2
+ KT1=-1.08 KT2=0 UA1=-7.2e-9
+ NJ=10 FC=0.5)
.ENDS
******************* Power Discrete MOSFET Thermal Model ************************
** Product: FQP3P50
** Package: TO-220
**------------------------------------------------------------------------------
.SUBCKT FQP3P50_THERMAL TH TL
CTHERM1 TH 6 8.04e-4
CTHERM2 6 5 4.28e-3
CTHERM3 5 4 8.34e-3
CTHERM4 4 3 1.62e-2
CTHERM5 3 2 2.02e-1
CTHERM6 2 TL 5.42e-1
RTHERM1 TH 6 1.30e-2
RTHERM2 6 5 2.88e-2
RTHERM3 5 4 3.68e-2
RTHERM4 4 3 4.12e-1
RTHERM5 3 2 4.41e-1
RTHERM6 2 TL 5.38e-1
.ENDS FQP3P50_THERMAL
**-----------------------------------------------------------------------------
** Creation: Mar.-16-2012 Rev.:0.0
** Fairchild Semiconductor
Last edited:
It seems that parameter "FC" does not exist in model BSIM3
Problem mit Spice-Modell
Hope it helps. 😉
Problem mit Spice-Modell
Hope it helps. 😉
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