Transconductance is given by
gm=q*Ic/K*T
where q=1.602e-19 (electron charge)
K=1.380e-23 (Boltzmann's constant)
T=Kelvin temperature (degrees Kelvin = degrees Cent + 273=300@ 23 degrees C)
This works out to about 38.5*Ic at 300 degrees Kelvin and is the same for both Ge and Si.
gm=q*Ic/K*T
where q=1.602e-19 (electron charge)
K=1.380e-23 (Boltzmann's constant)
T=Kelvin temperature (degrees Kelvin = degrees Cent + 273=300@ 23 degrees C)
This works out to about 38.5*Ic at 300 degrees Kelvin and is the same for both Ge and Si.
sawreyrw said:Transconductance is given by
gm=q*Ic/K*T
This works out to about 38.5*Ic at 300 degrees Kelvin and is the same for both Ge and Si.
'Electron voltage" (or speed) is just 25,8 mV at 300 °K (usually rounded up to 26 mV). However, for pratical purposes, is convenient use 30 mV in order to take in account the effective working junction temperature (75-80 °C for non-stressing working condition of bipolar devices).
Hi
Piercarlo
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