no mosfets are truely complementary, differing conductivity of N vs P doped Si gives different area (= parasitic C) for similar conductivity or different gm, Ron for same geometry
bjts differ too but Vbe, gm are more alike between pnp/npn
in mosfets threshold V variations and the larger Cgs,gd effects make "complementary" designs less useful in distortion cancellation compared to the fairly useful complementary bjt Vbe even order cancellation
Zetex has a few small signal mosfets - some are Supertex second sources
consider using the sot-223 package for a little more power - still big enough to hand prototype with and soldering a Cu flag on the tab can get you up 2 W
bjts differ too but Vbe, gm are more alike between pnp/npn
in mosfets threshold V variations and the larger Cgs,gd effects make "complementary" designs less useful in distortion cancellation compared to the fairly useful complementary bjt Vbe even order cancellation
Zetex has a few small signal mosfets - some are Supertex second sources
consider using the sot-223 package for a little more power - still big enough to hand prototype with and soldering a Cu flag on the tab can get you up 2 W
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