Simplistic MosFET HV Shunt Regs

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I have received IXYS, but noticed that perform worse current capability.
At same R1 R2 = 100R:
DN2540 can reach 134mA.
IXTP02N50P reach 100mA.
IXTP01N100D far less, 42mA.

Is Ok. 360R resistor value in the transiator gates? I can measure the performance in my oscilloscope, but very limited experience using it, I am afraid I will need assistance. By now the multimeter reading is stable. I wants also implement IXYS ones.
If the voltage is jumping up & down (oscillation), if it's solid as rock surely OK
 
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Hi, it takes lab work to confirm what is happening but upping the gate resistors value indicates that more current setting increases transconductance and it takes more gate damping to stabilize.

In any case 360Ω R1 R2 is permissible. There are examples of 1kΩ even. The downside of using more than needed gate stoppers value is it unnecessarily truncates the cascode's PSRR curve in very high frequencies. But in this case it looks like that higher value is needed indeed.
 
Yesterday I had a solder bridge, on Q1 drain to source pins. My bad at placing the three pin row as a socket.
Since fixed is no more heat on Q2.
Now I am happy to get finally 172mA. @ 77Vdc.
That's only by using DN2540 both on Q1 Q2.
I must note that it is consistent no matter value is on R1 R2 gate stoppers. Same results 100R, 360R and 510R.
If I use Ixys on both, then can't reach the specifications Load. I am going to try different combinations, maybe one only Ixys is still possible.
EDIT:
did'nt mention, R4 is set to maximum strengh= 0ohm
 
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Hola Felipe, no need to mod the schematic, for some reason now performs Ok. within my load specifications by just lowering R4 down to almost 0.
Another rule is mantain DN2540 as Q1, then I even can use IXTP02N50D as Q2 without any drawback.
I tried IXTP01N100D also as Q2 only, but fail to reach my load, by small margin.